JPS5368182A - Production of semiconductor memory device - Google Patents

Production of semiconductor memory device

Info

Publication number
JPS5368182A
JPS5368182A JP14410776A JP14410776A JPS5368182A JP S5368182 A JPS5368182 A JP S5368182A JP 14410776 A JP14410776 A JP 14410776A JP 14410776 A JP14410776 A JP 14410776A JP S5368182 A JPS5368182 A JP S5368182A
Authority
JP
Japan
Prior art keywords
production
memory device
semiconductor memory
memory cell
caracteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14410776A
Other languages
Japanese (ja)
Other versions
JPS6018148B2 (en
Inventor
Akisuke Mori
Kuniaki Makabe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51144107A priority Critical patent/JPS6018148B2/en
Publication of JPS5368182A publication Critical patent/JPS5368182A/en
Publication of JPS6018148B2 publication Critical patent/JPS6018148B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To improve write characteristics by making a peripheral circuit and a memory cell by the same process and satisfying the caracteristics of a transistor for the memory cell.
COPYRIGHT: (C)1978,JPO&Japio
JP51144107A 1976-11-30 1976-11-30 Method of manufacturing semiconductor memory device Expired JPS6018148B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51144107A JPS6018148B2 (en) 1976-11-30 1976-11-30 Method of manufacturing semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51144107A JPS6018148B2 (en) 1976-11-30 1976-11-30 Method of manufacturing semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5368182A true JPS5368182A (en) 1978-06-17
JPS6018148B2 JPS6018148B2 (en) 1985-05-09

Family

ID=15354339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51144107A Expired JPS6018148B2 (en) 1976-11-30 1976-11-30 Method of manufacturing semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6018148B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105358A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor memory
JPS55128862A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS57140056A (en) * 1981-02-24 1982-08-30 Toshiba Corp Semiconductor storage device
EP0008946B1 (en) * 1978-09-08 1986-01-15 Fujitsu Limited A semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008946B1 (en) * 1978-09-08 1986-01-15 Fujitsu Limited A semiconductor memory device
JPS55105358A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor memory
JPS55128862A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS57140056A (en) * 1981-02-24 1982-08-30 Toshiba Corp Semiconductor storage device

Also Published As

Publication number Publication date
JPS6018148B2 (en) 1985-05-09

Similar Documents

Publication Publication Date Title
JPS5368182A (en) Production of semiconductor memory device
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS53120383A (en) Production of semiconductor device
JPS51140528A (en) Magnetic bubble module
JPS5210032A (en) Construction method of semiconductor memory unit
JPS5342659A (en) Semiconductor integrated circuit
JPS5219975A (en) Semiconductor device
JPS52127179A (en) Manufacturing method of semiconductor device
JPS51118391A (en) Manufacturing process for semiconducter unit
JPS52124825A (en) High performance memory circuit
JPS538581A (en) Semiconductor memory unit
JPS52153383A (en) Preparation of semiconductor device
JPS5230182A (en) Process for producing semiconductor device
JPS51140520A (en) High speed write device
JPS5363866A (en) Production of semiconductor device
JPS5285432A (en) Write-in read-out-only semiconductor memory
JPS5289480A (en) Semiconductive nonvoltile memory device
JPS51112266A (en) Semiconductor device production method
JPS53143186A (en) Production of semiconductor device
JPS5216139A (en) Magnetic babble memory unit
JPS5344182A (en) Semiconductor device
JPS545681A (en) Semiconductor memory cell
JPS52142976A (en) Production of semiconductor integrated circuit device
JPS5358783A (en) Semiconductor device and its production
JPS5325394A (en) Se miconductor device