JPS5257789A - Photo coupled semiconductor device - Google Patents

Photo coupled semiconductor device

Info

Publication number
JPS5257789A
JPS5257789A JP13292475A JP13292475A JPS5257789A JP S5257789 A JPS5257789 A JP S5257789A JP 13292475 A JP13292475 A JP 13292475A JP 13292475 A JP13292475 A JP 13292475A JP S5257789 A JPS5257789 A JP S5257789A
Authority
JP
Japan
Prior art keywords
semiconductor device
elements
coupled semiconductor
light emitting
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13292475A
Other languages
Japanese (ja)
Other versions
JPS557709B2 (en
Inventor
Yoshitaka Sugawara
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13292475A priority Critical patent/JPS5257789A/en
Priority to CA263,453A priority patent/CA1061884A/en
Priority to NL7612271A priority patent/NL171758C/en
Priority to DE2650770A priority patent/DE2650770C3/en
Publication of JPS5257789A publication Critical patent/JPS5257789A/en
Publication of JPS557709B2 publication Critical patent/JPS557709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: To increase the scale of integration and facilitate packaging by forming an IC for controlling light emitting elements and a main IC containing light receiving elements by electrically insulating these within the same chip and electrically connecting the controlling integrated circuit elements to the light emitting elements through photo coupling of the light receiving elements by the use of insulation isolating techniques used in the element isolation of bipolar ICs.
COPYRIGHT: (C)1977,JPO&Japio
JP13292475A 1975-11-07 1975-11-07 Photo coupled semiconductor device Granted JPS5257789A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP13292475A JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device
CA263,453A CA1061884A (en) 1975-11-07 1976-10-15 Optoelectronic device having improved integration density and photocoupling efficiency
NL7612271A NL171758C (en) 1975-11-07 1976-11-04 OPTO-ELECTRICAL COUPLING DEVICE.
DE2650770A DE2650770C3 (en) 1975-11-07 1976-11-05 Opto-electronic coupling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13292475A JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device

Publications (2)

Publication Number Publication Date
JPS5257789A true JPS5257789A (en) 1977-05-12
JPS557709B2 JPS557709B2 (en) 1980-02-27

Family

ID=15092682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13292475A Granted JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device

Country Status (4)

Country Link
JP (1) JPS5257789A (en)
CA (1) CA1061884A (en)
DE (1) DE2650770C3 (en)
NL (1) NL171758C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093880A1 (en) * 2007-02-02 2008-08-07 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same
WO2008123020A1 (en) * 2007-03-09 2008-10-16 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016171235A (en) * 2015-03-13 2016-09-23 株式会社東芝 Semiconductor module

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (en) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg OPTO-ELECTRONIC COMPONENT

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008093880A1 (en) * 2007-02-02 2008-08-07 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same
US8188497B2 (en) 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
JP5295783B2 (en) * 2007-02-02 2013-09-18 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Semiconductor device
WO2008123020A1 (en) * 2007-03-09 2008-10-16 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same
US7855425B2 (en) 2007-03-09 2010-12-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP2016171235A (en) * 2015-03-13 2016-09-23 株式会社東芝 Semiconductor module
US10204891B2 (en) 2015-03-13 2019-02-12 Kabushiki Kaisha Toshiba Semiconductor module

Also Published As

Publication number Publication date
JPS557709B2 (en) 1980-02-27
CA1061884A (en) 1979-09-04
DE2650770A1 (en) 1977-05-18
DE2650770B2 (en) 1980-06-12
NL171758B (en) 1982-12-01
NL171758C (en) 1983-05-02
NL7612271A (en) 1977-05-10
DE2650770C3 (en) 1981-02-26

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