JPS5261971A - Control of turn-off time of silicon controlled rectifying element - Google Patents

Control of turn-off time of silicon controlled rectifying element

Info

Publication number
JPS5261971A
JPS5261971A JP13845275A JP13845275A JPS5261971A JP S5261971 A JPS5261971 A JP S5261971A JP 13845275 A JP13845275 A JP 13845275A JP 13845275 A JP13845275 A JP 13845275A JP S5261971 A JPS5261971 A JP S5261971A
Authority
JP
Japan
Prior art keywords
turn
time
control
silicon controlled
rectifying element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13845275A
Other languages
Japanese (ja)
Inventor
Yukio Igarashi
Hisanori Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13845275A priority Critical patent/JPS5261971A/en
Publication of JPS5261971A publication Critical patent/JPS5261971A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To reduce the variation in the turn-off time of an SCR and improve processing works by etching-off 4 ∼ 15μ of the surface of an Si wafer after diffusion of Ga and diffusing Au therein.
COPYRIGHT: (C)1977,JPO&Japio
JP13845275A 1975-11-18 1975-11-18 Control of turn-off time of silicon controlled rectifying element Pending JPS5261971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13845275A JPS5261971A (en) 1975-11-18 1975-11-18 Control of turn-off time of silicon controlled rectifying element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13845275A JPS5261971A (en) 1975-11-18 1975-11-18 Control of turn-off time of silicon controlled rectifying element

Publications (1)

Publication Number Publication Date
JPS5261971A true JPS5261971A (en) 1977-05-21

Family

ID=15222330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13845275A Pending JPS5261971A (en) 1975-11-18 1975-11-18 Control of turn-off time of silicon controlled rectifying element

Country Status (1)

Country Link
JP (1) JPS5261971A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231363A (en) * 1984-04-27 1985-11-16 Mitsubishi Electric Corp Manufacture of gate turn-off thyristor
JPS63265466A (en) * 1988-03-11 1988-11-01 Hitachi Ltd gate turn off thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231363A (en) * 1984-04-27 1985-11-16 Mitsubishi Electric Corp Manufacture of gate turn-off thyristor
JPS63265466A (en) * 1988-03-11 1988-11-01 Hitachi Ltd gate turn off thyristor

Similar Documents

Publication Publication Date Title
JPS51127682A (en) Manufacturing process of semiconductor device
JPS52140280A (en) Semiconductor device
JPS51114079A (en) Construction of semiconductor memory device
JPS5239378A (en) Silicon-gated mos type semiconductor device
JPS51127681A (en) Manufacturing process of semiconductor device
JPS5261971A (en) Control of turn-off time of silicon controlled rectifying element
JPS5227354A (en) Impurity diffusion method for iii-v group compound semiconductor region
JPS5228868A (en) Semiconductor device
JPS5228879A (en) Semiconductor device and method for its production
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS522165A (en) Method of thermally diffusing selectively aluminum of semiconductor su bstrate
JPS5373990A (en) Semiconductor device
JPS5329082A (en) Semiconductor device
JPS5230171A (en) Method for fabrication of semiconductor device
JPS5255477A (en) Semiconductor device
JPS51118960A (en) Wafer form semiconductor doping material
JPS5374368A (en) Package for semiconductor device
JPS5210676A (en) Semiconductor device
JPS5286063A (en) Semiconductor device and its fabrication
JPS5275270A (en) Method of diffusing impurity in semiconductor
JPS5224475A (en) Planar thyristor process
JPS5211764A (en) Method of manufacturing semiconductor device
JPS5233481A (en) Fixing process of semiconductor device to package
JPS51132985A (en) Semiconductor device
JPS5231690A (en) Productin method of semiconductor device