JPS5228879A - Semiconductor device and method for its production - Google Patents

Semiconductor device and method for its production

Info

Publication number
JPS5228879A
JPS5228879A JP50105378A JP10537875A JPS5228879A JP S5228879 A JPS5228879 A JP S5228879A JP 50105378 A JP50105378 A JP 50105378A JP 10537875 A JP10537875 A JP 10537875A JP S5228879 A JPS5228879 A JP S5228879A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
polucrystalline
imrove
diffusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50105378A
Other languages
Japanese (ja)
Other versions
JPS5914898B2 (en
Inventor
Yoichi Akasaka
Yoshihiko Hirose
Kazuo Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50105378A priority Critical patent/JPS5914898B2/en
Publication of JPS5228879A publication Critical patent/JPS5228879A/en
Publication of JPS5914898B2 publication Critical patent/JPS5914898B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make base width thin and to imrove device characteristics by injecting impurities into polucrystalline Si layer and by diffusing them into the substrate in the solid state.
COPYRIGHT: (C)1977,JPO&Japio
JP50105378A 1975-08-29 1975-08-29 Manufacturing method of semiconductor device Expired JPS5914898B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50105378A JPS5914898B2 (en) 1975-08-29 1975-08-29 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50105378A JPS5914898B2 (en) 1975-08-29 1975-08-29 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5228879A true JPS5228879A (en) 1977-03-04
JPS5914898B2 JPS5914898B2 (en) 1984-04-06

Family

ID=14406007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50105378A Expired JPS5914898B2 (en) 1975-08-29 1975-08-29 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5914898B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310979A (en) * 1976-07-16 1978-01-31 Mitsubishi Electric Corp Semiconductor device and its production
JPS57168249U (en) * 1981-04-16 1982-10-23
JPS58154267A (en) * 1982-03-08 1983-09-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing bipolar transistor
US5387813A (en) * 1992-09-25 1995-02-07 National Semiconductor Corporation Transistors with emitters having at least three sides

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940884A (en) * 1972-08-25 1974-04-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940884A (en) * 1972-08-25 1974-04-17

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310979A (en) * 1976-07-16 1978-01-31 Mitsubishi Electric Corp Semiconductor device and its production
JPS57168249U (en) * 1981-04-16 1982-10-23
JPS58154267A (en) * 1982-03-08 1983-09-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing bipolar transistor
US5387813A (en) * 1992-09-25 1995-02-07 National Semiconductor Corporation Transistors with emitters having at least three sides
US5508552A (en) * 1992-09-25 1996-04-16 National Semiconductor Corporation Transistors with multiple emitters, and transistors with substantially square base emitter junctions

Also Published As

Publication number Publication date
JPS5914898B2 (en) 1984-04-06

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