JPS5263075A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5263075A
JPS5263075A JP50138212A JP13821275A JPS5263075A JP S5263075 A JPS5263075 A JP S5263075A JP 50138212 A JP50138212 A JP 50138212A JP 13821275 A JP13821275 A JP 13821275A JP S5263075 A JPS5263075 A JP S5263075A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
resistance
fet
string
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50138212A
Other languages
Japanese (ja)
Inventor
Yasoji Suzuki
Kenji Manabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50138212A priority Critical patent/JPS5263075A/en
Publication of JPS5263075A publication Critical patent/JPS5263075A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:An input protecting circuit which is also string to minus side pulse is obtained by connecting a resistance between an input terminal and the gate of an IG-FET and providing diodes as specified between said resistance and a power supply.
JP50138212A 1975-11-19 1975-11-19 Semiconductor integrated circuit Pending JPS5263075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50138212A JPS5263075A (en) 1975-11-19 1975-11-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50138212A JPS5263075A (en) 1975-11-19 1975-11-19 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5263075A true JPS5263075A (en) 1977-05-25

Family

ID=15216690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50138212A Pending JPS5263075A (en) 1975-11-19 1975-11-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5263075A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998552A (en) * 1982-11-03 1984-06-06 ウエスチングハウス　エレクトリック　コ−ポレ−ション Field effect transistor
JPS6081868A (en) * 1983-10-11 1985-05-09 Nec Corp Semiconductor device
US4806999A (en) * 1985-09-30 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Area efficient input protection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998552A (en) * 1982-11-03 1984-06-06 ウエスチングハウス　エレクトリック　コ−ポレ−ション Field effect transistor
JPS6081868A (en) * 1983-10-11 1985-05-09 Nec Corp Semiconductor device
US4806999A (en) * 1985-09-30 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Area efficient input protection

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