JPS5267581A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5267581A
JPS5267581A JP50143008A JP14300875A JPS5267581A JP S5267581 A JPS5267581 A JP S5267581A JP 50143008 A JP50143008 A JP 50143008A JP 14300875 A JP14300875 A JP 14300875A JP S5267581 A JPS5267581 A JP S5267581A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
increased
pnp transistor
iil element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50143008A
Other languages
Japanese (ja)
Inventor
Kenji Kaneko
Takahiro Okabe
Yoshito Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50143008A priority Critical patent/JPS5267581A/en
Publication of JPS5267581A publication Critical patent/JPS5267581A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/652—Integrated injection logic using vertical injector structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To provide an IIL element in which the current amplication factor of PNP transistor is increased.
JP50143008A 1975-12-03 1975-12-03 Semiconductor integrated circuit Pending JPS5267581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50143008A JPS5267581A (en) 1975-12-03 1975-12-03 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50143008A JPS5267581A (en) 1975-12-03 1975-12-03 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5267581A true JPS5267581A (en) 1977-06-04

Family

ID=15328794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50143008A Pending JPS5267581A (en) 1975-12-03 1975-12-03 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5267581A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4635087A (en) * 1984-12-28 1987-01-06 Motorola, Inc. Monolithic bipolar SCR memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4635087A (en) * 1984-12-28 1987-01-06 Motorola, Inc. Monolithic bipolar SCR memory cell

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