JPS5267531A - Mis type semiconductor memory cell - Google Patents
Mis type semiconductor memory cellInfo
- Publication number
- JPS5267531A JPS5267531A JP50142983A JP14298375A JPS5267531A JP S5267531 A JPS5267531 A JP S5267531A JP 50142983 A JP50142983 A JP 50142983A JP 14298375 A JP14298375 A JP 14298375A JP S5267531 A JPS5267531 A JP S5267531A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- type semiconductor
- semiconductor memory
- mis type
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 208000000044 Amnesia Diseases 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 231100000863 loss of memory Toxicity 0.000 abstract 1
- 229920006268 silicone film Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To prevent the loss of memory varnishment with refresj operation, by connecting Pn junction formed on the silicone film of poly crystal so that it can be back bias between the power supply voltage and the memory MISFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50142983A JPS5267531A (en) | 1975-12-03 | 1975-12-03 | Mis type semiconductor memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50142983A JPS5267531A (en) | 1975-12-03 | 1975-12-03 | Mis type semiconductor memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5267531A true JPS5267531A (en) | 1977-06-04 |
Family
ID=15328190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50142983A Pending JPS5267531A (en) | 1975-12-03 | 1975-12-03 | Mis type semiconductor memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5267531A (en) |
-
1975
- 1975-12-03 JP JP50142983A patent/JPS5267531A/en active Pending
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