JPS5295185A - Mis semiconductor unit - Google Patents

Mis semiconductor unit

Info

Publication number
JPS5295185A
JPS5295185A JP1146276A JP1146276A JPS5295185A JP S5295185 A JPS5295185 A JP S5295185A JP 1146276 A JP1146276 A JP 1146276A JP 1146276 A JP1146276 A JP 1146276A JP S5295185 A JPS5295185 A JP S5295185A
Authority
JP
Japan
Prior art keywords
semiconductor unit
mis semiconductor
mis
misic
mosic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1146276A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Yasunobu Osa
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1146276A priority Critical patent/JPS5295185A/en
Publication of JPS5295185A publication Critical patent/JPS5295185A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the semiconductor unit such as MISIC, C-MIS and high pressure-proof MIS transistor by using the manufacturing process of MOSIC in LOCOS structure.
JP1146276A 1976-02-06 1976-02-06 Mis semiconductor unit Pending JPS5295185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1146276A JPS5295185A (en) 1976-02-06 1976-02-06 Mis semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1146276A JPS5295185A (en) 1976-02-06 1976-02-06 Mis semiconductor unit

Publications (1)

Publication Number Publication Date
JPS5295185A true JPS5295185A (en) 1977-08-10

Family

ID=11778749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1146276A Pending JPS5295185A (en) 1976-02-06 1976-02-06 Mis semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5295185A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116885A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Field effect transistor of insulation gate type and its manufacture
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
US6169311B1 (en) 1997-10-27 2001-01-02 Nec Corporation Semiconductor integrated circuit having an input and output protective circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509379A (en) * 1973-05-23 1975-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509379A (en) * 1973-05-23 1975-01-30

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116885A (en) * 1978-03-03 1979-09-11 Hitachi Ltd Field effect transistor of insulation gate type and its manufacture
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
US6169311B1 (en) 1997-10-27 2001-01-02 Nec Corporation Semiconductor integrated circuit having an input and output protective circuit

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