JPS5296864A - Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor - Google Patents

Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor

Info

Publication number
JPS5296864A
JPS5296864A JP981077A JP981077A JPS5296864A JP S5296864 A JPS5296864 A JP S5296864A JP 981077 A JP981077 A JP 981077A JP 981077 A JP981077 A JP 981077A JP S5296864 A JPS5296864 A JP S5296864A
Authority
JP
Japan
Prior art keywords
slice
semiconductor
transforming
polycrystal
huge crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP981077A
Other languages
Japanese (ja)
Inventor
Bagudadei Asuran
Waren Gaatoraa Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPS5296864A publication Critical patent/JPS5296864A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP981077A 1976-02-09 1977-02-02 Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor Pending JPS5296864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65655676A 1976-02-09 1976-02-09

Publications (1)

Publication Number Publication Date
JPS5296864A true JPS5296864A (en) 1977-08-15

Family

ID=24633553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP981077A Pending JPS5296864A (en) 1976-02-09 1977-02-02 Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor

Country Status (2)

Country Link
JP (1) JPS5296864A (en)
DE (1) DE2704549A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPS6289367A (en) * 1985-10-15 1987-04-23 シ−メンス、アクチエンゲゼルシヤフト Method for manufacturing large-area silicon crystals for solar cells
JP2002057166A (en) * 2000-06-02 2002-02-22 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPS6289367A (en) * 1985-10-15 1987-04-23 シ−メンス、アクチエンゲゼルシヤフト Method for manufacturing large-area silicon crystals for solar cells
JP2002057166A (en) * 2000-06-02 2002-02-22 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
DE2704549A1 (en) 1977-08-11

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