JPS53129986A - Complementary type mis semiconductor device - Google Patents
Complementary type mis semiconductor deviceInfo
- Publication number
- JPS53129986A JPS53129986A JP4446377A JP4446377A JPS53129986A JP S53129986 A JPS53129986 A JP S53129986A JP 4446377 A JP4446377 A JP 4446377A JP 4446377 A JP4446377 A JP 4446377A JP S53129986 A JPS53129986 A JP S53129986A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type mis
- complementary type
- mis semiconductor
- latchh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the increasein curren towing to latchh-up and obviate the breakdown of an IC by providing an impedance means within a semiconductor chip and applying a supply voltage to internal circuits by way of this.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52044463A JPS6015154B2 (en) | 1977-04-20 | 1977-04-20 | Complementary MIS semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52044463A JPS6015154B2 (en) | 1977-04-20 | 1977-04-20 | Complementary MIS semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53129986A true JPS53129986A (en) | 1978-11-13 |
| JPS6015154B2 JPS6015154B2 (en) | 1985-04-17 |
Family
ID=12692181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52044463A Expired JPS6015154B2 (en) | 1977-04-20 | 1977-04-20 | Complementary MIS semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6015154B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6167952A (en) * | 1984-09-11 | 1986-04-08 | Nec Corp | CMOS semiconductor device |
-
1977
- 1977-04-20 JP JP52044463A patent/JPS6015154B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6167952A (en) * | 1984-09-11 | 1986-04-08 | Nec Corp | CMOS semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6015154B2 (en) | 1985-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5279787A (en) | Integrated circuit device | |
| GB1402217A (en) | Insulated gate field-effect transistor input protection circuit | |
| DE2963094D1 (en) | Constant voltage threshold semiconductor device | |
| JPS54127291A (en) | Mos semiconductor ic device | |
| DE3071965D1 (en) | Reference voltage generator and circuit for measuring the threshold voltage of a mos transistor, applicable to such a reference voltage generator | |
| JPS53129986A (en) | Complementary type mis semiconductor device | |
| GB680088A (en) | Apparatus for applying conditioning stimuli to enuretics | |
| JPS53108391A (en) | Semiconductor device | |
| JPS5211880A (en) | Semiconductor integrated circuit device | |
| JPS53103371A (en) | Field effect transistor complementary circuit | |
| JPS6472565A (en) | Mos ic inverse battery protector | |
| JPS53108737A (en) | Memory circuit | |
| JPS53126280A (en) | Complementary type mis semiconductor device | |
| JPS6489557A (en) | Semiconductor device | |
| JPS5358780A (en) | Field effect type transistor | |
| JPS526036A (en) | Semiconductor memory circuit | |
| JPS5211883A (en) | Semiconductor integrated circuit device | |
| DE3367144D1 (en) | Integrated pulse former | |
| JPS54138356A (en) | High impedance input circuit | |
| JPS546757A (en) | Serial connection circuit for transistor | |
| JPS5211879A (en) | Semiconductor integrated circuit device | |
| JPS5211783A (en) | Field effect transistor for integrated circuits | |
| JPS51138348A (en) | Semiconductor device | |
| FR1254944A (en) | Electrical device for supplying one or more magnetostriction vibrators | |
| JPS5412279A (en) | Production of transistors |