JPS5318973A - Production of two kinds of schottky barrier diodes - Google Patents
Production of two kinds of schottky barrier diodesInfo
- Publication number
- JPS5318973A JPS5318973A JP9280976A JP9280976A JPS5318973A JP S5318973 A JPS5318973 A JP S5318973A JP 9280976 A JP9280976 A JP 9280976A JP 9280976 A JP9280976 A JP 9280976A JP S5318973 A JPS5318973 A JP S5318973A
- Authority
- JP
- Japan
- Prior art keywords
- schottky barrier
- barrier diodes
- kinds
- production
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To form two varying Schottky barrier diodes of small reverse current and large threshold voltage on the same chip by depositing Ti on an N- type Si substrate, then depositing Pt thereon and applying heat treatment respectivley separately thereto.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9280976A JPS5318973A (en) | 1976-08-05 | 1976-08-05 | Production of two kinds of schottky barrier diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9280976A JPS5318973A (en) | 1976-08-05 | 1976-08-05 | Production of two kinds of schottky barrier diodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5318973A true JPS5318973A (en) | 1978-02-21 |
| JPS5639552B2 JPS5639552B2 (en) | 1981-09-14 |
Family
ID=14064726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9280976A Granted JPS5318973A (en) | 1976-08-05 | 1976-08-05 | Production of two kinds of schottky barrier diodes |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5318973A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103375A (en) * | 1982-12-03 | 1984-06-14 | Nec Corp | Method for manufacturing a semiconductor device having a Schottky junction |
| JPS6119179A (en) * | 1984-07-05 | 1986-01-28 | Nippon Gakki Seizo Kk | Manufacture of semiconductor device |
| US4619035A (en) * | 1984-06-23 | 1986-10-28 | Nippon Gakki Seizo Kabushiki Kaisha | Method of manufacturing a semiconductor device including Schottky barrier diodes |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6136039U (en) * | 1984-08-08 | 1986-03-05 | 中部工機株式会社 | floor hatch |
-
1976
- 1976-08-05 JP JP9280976A patent/JPS5318973A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103375A (en) * | 1982-12-03 | 1984-06-14 | Nec Corp | Method for manufacturing a semiconductor device having a Schottky junction |
| US4619035A (en) * | 1984-06-23 | 1986-10-28 | Nippon Gakki Seizo Kabushiki Kaisha | Method of manufacturing a semiconductor device including Schottky barrier diodes |
| JPS6119179A (en) * | 1984-07-05 | 1986-01-28 | Nippon Gakki Seizo Kk | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5639552B2 (en) | 1981-09-14 |
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