JPS5319768A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5319768A
JPS5319768A JP9414576A JP9414576A JPS5319768A JP S5319768 A JPS5319768 A JP S5319768A JP 9414576 A JP9414576 A JP 9414576A JP 9414576 A JP9414576 A JP 9414576A JP S5319768 A JPS5319768 A JP S5319768A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
electrodes
simplifying
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9414576A
Other languages
Japanese (ja)
Other versions
JPS5716509B2 (en
Inventor
Hideo Sei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9414576A priority Critical patent/JPS5319768A/en
Publication of JPS5319768A publication Critical patent/JPS5319768A/en
Publication of JPS5716509B2 publication Critical patent/JPS5716509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To reduce a electrostatic capacity between electrodes and a substrate by simplifying the patterns of conductive layers such as electrodes and wires without using a bus for the application of a transfer voltage.
JP9414576A 1976-08-06 1976-08-06 Charge transfer device Granted JPS5319768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9414576A JPS5319768A (en) 1976-08-06 1976-08-06 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9414576A JPS5319768A (en) 1976-08-06 1976-08-06 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS5319768A true JPS5319768A (en) 1978-02-23
JPS5716509B2 JPS5716509B2 (en) 1982-04-05

Family

ID=14102204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9414576A Granted JPS5319768A (en) 1976-08-06 1976-08-06 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5319768A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146482U (en) * 1974-05-20 1975-12-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146482U (en) * 1974-05-20 1975-12-04

Also Published As

Publication number Publication date
JPS5716509B2 (en) 1982-04-05

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