JPS5329687A - Semiconductor light emitting device and its production - Google Patents

Semiconductor light emitting device and its production

Info

Publication number
JPS5329687A
JPS5329687A JP10480176A JP10480176A JPS5329687A JP S5329687 A JPS5329687 A JP S5329687A JP 10480176 A JP10480176 A JP 10480176A JP 10480176 A JP10480176 A JP 10480176A JP S5329687 A JPS5329687 A JP S5329687A
Authority
JP
Japan
Prior art keywords
light emitting
production
emitting device
semiconductor light
burying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10480176A
Other languages
Japanese (ja)
Other versions
JPS5858831B2 (en
Inventor
Kunio Ito
Morio Inoue
Kunihiko Asahi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP51104801A priority Critical patent/JPS5858831B2/en
Publication of JPS5329687A publication Critical patent/JPS5329687A/en
Publication of JPS5858831B2 publication Critical patent/JPS5858831B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To make possible room temperature continuous oscillation by forming laser element regions as light emitting parts in mesa stripe form and burying a high resistivity layer in the lateral surface thereof thereby escaping the heat evolved in active regions from here too.
COPYRIGHT: (C)1978,JPO&Japio
JP51104801A 1976-08-31 1976-08-31 Method for manufacturing semiconductor light emitting device Expired JPS5858831B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51104801A JPS5858831B2 (en) 1976-08-31 1976-08-31 Method for manufacturing semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51104801A JPS5858831B2 (en) 1976-08-31 1976-08-31 Method for manufacturing semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS5329687A true JPS5329687A (en) 1978-03-20
JPS5858831B2 JPS5858831B2 (en) 1983-12-27

Family

ID=14390529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51104801A Expired JPS5858831B2 (en) 1976-08-31 1976-08-31 Method for manufacturing semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5858831B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226673A (en) * 1986-03-28 1987-10-05 Furukawa Electric Co Ltd:The Semiconductor light-emitting device and manufacture thereof
JPH0294682A (en) * 1988-09-30 1990-04-05 Furukawa Electric Co Ltd:The Manufacture of semiconductor laser device
JPH08307010A (en) * 1996-04-22 1996-11-22 Hitachi Ltd Semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62226673A (en) * 1986-03-28 1987-10-05 Furukawa Electric Co Ltd:The Semiconductor light-emitting device and manufacture thereof
JPH0294682A (en) * 1988-09-30 1990-04-05 Furukawa Electric Co Ltd:The Manufacture of semiconductor laser device
JPH08307010A (en) * 1996-04-22 1996-11-22 Hitachi Ltd Semiconductor laser

Also Published As

Publication number Publication date
JPS5858831B2 (en) 1983-12-27

Similar Documents

Publication Publication Date Title
JPS5356972A (en) Mesa type semiconductor device
JPS5329687A (en) Semiconductor light emitting device and its production
JPS52106283A (en) Semiconductor laser unit
JPS5437594A (en) Semiconductor laser and its manufacture
JPS5432283A (en) Semiconductor laser unit
JPS5363871A (en) Production of semiconductor device
JPS5336463A (en) Manufacture of semiconductor device
JPS5336188A (en) Semiconductor laser device
JPS52153686A (en) Semiconductor light emitting device
JPS5367389A (en) Production of semiconductor laser
JPS53120291A (en) Manufacture of semiconductor laser
JPS5234686A (en) Double hetero junction type semiconductor laser element and its manufa cturing process
JPS5299793A (en) Semiconductor laser device
JPS546767A (en) Manufacture of semiconductor device
JPS52130584A (en) Distribution feedback type laser
JPS5591892A (en) Semiconductor laser light emission device
JPS52135281A (en) Semiconductor device
JPS5414183A (en) Semiconductor laser element and its manufacture
JPS5272191A (en) Semiconductor laser device
JPS5410689A (en) Semiconductor laser device and its production
JPS5425185A (en) Semiconductor laser device and its manufacture
JPS52105791A (en) Injection type semiconductor light emitting device
JPS5395570A (en) Forming method of epitaxial layer
JPS53117991A (en) Semiconductor laser
JPS5356987A (en) Semiconductor laser device