JPS5342568A - Hetero junction type field effect transistor - Google Patents

Hetero junction type field effect transistor

Info

Publication number
JPS5342568A
JPS5342568A JP11661276A JP11661276A JPS5342568A JP S5342568 A JPS5342568 A JP S5342568A JP 11661276 A JP11661276 A JP 11661276A JP 11661276 A JP11661276 A JP 11661276A JP S5342568 A JPS5342568 A JP S5342568A
Authority
JP
Japan
Prior art keywords
hetero junction
field effect
effect transistor
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11661276A
Other languages
Japanese (ja)
Inventor
Yutaka Hayashi
Mitsuyuki Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP11661276A priority Critical patent/JPS5342568A/en
Publication of JPS5342568A publication Critical patent/JPS5342568A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make possible controlling of the numbers of carriers of inversion layers with the voltage change of a hetero junction by providing a gate region composed of a semiconductor material of a large band gap than that of a substrate in contact with source, drain regions and the substrate, between the drain, source regions formed on the semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP11661276A 1976-09-30 1976-09-30 Hetero junction type field effect transistor Pending JPS5342568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11661276A JPS5342568A (en) 1976-09-30 1976-09-30 Hetero junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11661276A JPS5342568A (en) 1976-09-30 1976-09-30 Hetero junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5342568A true JPS5342568A (en) 1978-04-18

Family

ID=14691474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11661276A Pending JPS5342568A (en) 1976-09-30 1976-09-30 Hetero junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5342568A (en)

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