JPS5347277A - Etching method - Google Patents

Etching method

Info

Publication number
JPS5347277A
JPS5347277A JP12180876A JP12180876A JPS5347277A JP S5347277 A JPS5347277 A JP S5347277A JP 12180876 A JP12180876 A JP 12180876A JP 12180876 A JP12180876 A JP 12180876A JP S5347277 A JPS5347277 A JP S5347277A
Authority
JP
Japan
Prior art keywords
silicon
etching method
etching
intensity
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12180876A
Other languages
Japanese (ja)
Inventor
Takashi Yamazaki
Katsuo Sumino
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12180876A priority Critical patent/JPS5347277A/en
Publication of JPS5347277A publication Critical patent/JPS5347277A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:In etching silicon, the chemical luminescence produced from the silicon surface is detected with a photo diode, etc., whereby the flow rate of oxygen gas is controlled according to the intensity of light and the etching rate of silicon is automatically controled.
JP12180876A 1976-10-13 1976-10-13 Etching method Pending JPS5347277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12180876A JPS5347277A (en) 1976-10-13 1976-10-13 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12180876A JPS5347277A (en) 1976-10-13 1976-10-13 Etching method

Publications (1)

Publication Number Publication Date
JPS5347277A true JPS5347277A (en) 1978-04-27

Family

ID=14820429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12180876A Pending JPS5347277A (en) 1976-10-13 1976-10-13 Etching method

Country Status (1)

Country Link
JP (1) JPS5347277A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723226A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
JPH01100924A (en) * 1987-10-14 1989-04-19 Seiko Epson Corp Manufacturing method of active matrix substrate
JPH0354824A (en) * 1989-07-24 1991-03-08 Nec Corp Semiconductor processing and semiconductor processing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723226A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
JPH01100924A (en) * 1987-10-14 1989-04-19 Seiko Epson Corp Manufacturing method of active matrix substrate
JPH0354824A (en) * 1989-07-24 1991-03-08 Nec Corp Semiconductor processing and semiconductor processing device

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