JPS539491A - Photo semiconductor device - Google Patents

Photo semiconductor device

Info

Publication number
JPS539491A
JPS539491A JP8387276A JP8387276A JPS539491A JP S539491 A JPS539491 A JP S539491A JP 8387276 A JP8387276 A JP 8387276A JP 8387276 A JP8387276 A JP 8387276A JP S539491 A JPS539491 A JP S539491A
Authority
JP
Japan
Prior art keywords
semiconductor device
photo semiconductor
emitting element
light emitting
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8387276A
Other languages
Japanese (ja)
Other versions
JPS5931872B2 (en
Inventor
Naoto Mogi
Yoichi Unno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51083872A priority Critical patent/JPS5931872B2/en
Publication of JPS539491A publication Critical patent/JPS539491A/en
Publication of JPS5931872B2 publication Critical patent/JPS5931872B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE: To integrate both light emitting element and photo detector to a small size by superposing both elements so that the center axis of the radiation light of the light emitting element becomes parallel to the light receiving surface of the detecting element.
COPYRIGHT: (C)1978,JPO&Japio
JP51083872A 1976-07-14 1976-07-14 Optical semiconductor device Expired JPS5931872B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51083872A JPS5931872B2 (en) 1976-07-14 1976-07-14 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51083872A JPS5931872B2 (en) 1976-07-14 1976-07-14 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS539491A true JPS539491A (en) 1978-01-27
JPS5931872B2 JPS5931872B2 (en) 1984-08-04

Family

ID=13814737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51083872A Expired JPS5931872B2 (en) 1976-07-14 1976-07-14 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS5931872B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110286A (en) * 1980-02-05 1981-09-01 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS6139980A (en) * 1984-07-31 1986-02-26 Sharp Corp Audio signal processing device
JPS61151365U (en) * 1985-03-11 1986-09-18
JPS6219772U (en) * 1985-07-18 1987-02-05
US4695859A (en) * 1986-10-20 1987-09-22 Energy Conversion Devices, Inc. Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193778U (en) * 1985-05-27 1986-12-02

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110286A (en) * 1980-02-05 1981-09-01 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS6139980A (en) * 1984-07-31 1986-02-26 Sharp Corp Audio signal processing device
JPS61151365U (en) * 1985-03-11 1986-09-18
JPS6219772U (en) * 1985-07-18 1987-02-05
US4695859A (en) * 1986-10-20 1987-09-22 Energy Conversion Devices, Inc. Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits

Also Published As

Publication number Publication date
JPS5931872B2 (en) 1984-08-04

Similar Documents

Publication Publication Date Title
JPS5345119A (en) Solid state pickup element
JPS5374395A (en) Solid state pickup device
JPS5211784A (en) Photo semiconductor device
JPS5412580A (en) Photo detector
JPS53116792A (en) Semiconductor light emitting-photo detecting composite device
JPS5349974A (en) Semiconductor laser device
JPS5414079A (en) Trouble detector for light-ray type safety device
JPS5242390A (en) Semiconductor light receiving device
JPS5364489A (en) Photo semiconductor device
JPS5278392A (en) Optical semiconductor device
JPS5361298A (en) Photoelectric smoke detector
JPS5413784A (en) Semiconductor photo detector
JPS5414691A (en) Liminous semiconductor device
JPS5330888A (en) Photo detector
JPS5238980A (en) Temperature detection device
JPS5348789A (en) Vibration detector
JPS5376692A (en) Semiconductor light emitting device
JPS546794A (en) Semiconductor device
JPS5338225A (en) Mark sensor
JPS52134387A (en) Semiconductor laser device
JPS53103386A (en) Semiconductor radiation detector
JPS5342690A (en) Photo coupling semiconductor device
JPS53105185A (en) Photo integrated semiconductor device
JPS5380987A (en) Optical semiconductor device
JPS53135586A (en) Photo coupling semiconductor device