JPS5352082A - Production of semiconductor integrated circuit - Google Patents
Production of semiconductor integrated circuitInfo
- Publication number
- JPS5352082A JPS5352082A JP12687076A JP12687076A JPS5352082A JP S5352082 A JPS5352082 A JP S5352082A JP 12687076 A JP12687076 A JP 12687076A JP 12687076 A JP12687076 A JP 12687076A JP S5352082 A JPS5352082 A JP S5352082A
- Authority
- JP
- Japan
- Prior art keywords
- production
- integrated circuit
- semiconductor integrated
- occurring
- damage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To prevent parasitic channels from occurring and obtain IC of a high reliability and a high integration degree by injecting impurity ions of a proper quantity - which cannot damage the characteristic of a semiconductor element to obtain a required threshold voltage.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12687076A JPS5352082A (en) | 1976-10-22 | 1976-10-22 | Production of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12687076A JPS5352082A (en) | 1976-10-22 | 1976-10-22 | Production of semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5352082A true JPS5352082A (en) | 1978-05-12 |
Family
ID=14945866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12687076A Pending JPS5352082A (en) | 1976-10-22 | 1976-10-22 | Production of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5352082A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57143855A (en) * | 1981-02-27 | 1982-09-06 | Nec Corp | Semiconductor integrated circuit device |
-
1976
- 1976-10-22 JP JP12687076A patent/JPS5352082A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57143855A (en) * | 1981-02-27 | 1982-09-06 | Nec Corp | Semiconductor integrated circuit device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5234671A (en) | Semiconductor integrated circuit | |
| JPS5352082A (en) | Production of semiconductor integrated circuit | |
| JPS534472A (en) | Semiconductor package | |
| JPS5357971A (en) | Production of semiconductor device | |
| JPS5315772A (en) | Mis semiconductor device and its production | |
| JPS52117554A (en) | Manufacturing method of semiconductor device | |
| JPS52149481A (en) | Semiconductor integrated circuit device and its production | |
| JPS5413279A (en) | Manufacture for semiconductor integrated circuit device | |
| JPS531471A (en) | Manufacture for semiconductor device | |
| JPS52135273A (en) | Mos type semiconductor device | |
| JPS5377480A (en) | Production of semiconductor integrated circuit device | |
| JPS5335142A (en) | Power supply circuit | |
| JPS51147188A (en) | Semicoductor device | |
| JPS52153383A (en) | Preparation of semiconductor device | |
| JPS51139287A (en) | Semi-conductor integrated circuit device | |
| JPS52147083A (en) | Semiconductor devices and integrated circuit using the same | |
| JPS5368163A (en) | Production of flip chip | |
| JPS5253678A (en) | Semiconductor integrated circuit and productin of the same | |
| JPS5363866A (en) | Production of semiconductor device | |
| JPS52146568A (en) | Production of silicon gate mos type semiconductor integrated circuit device | |
| JPS51140492A (en) | Method of fabricating complementary insulating gate semiconductor inte grated circuit device | |
| JPS5368082A (en) | Semiconductor integrated circuit | |
| JPS548459A (en) | Semiconductor device | |
| JPS52142976A (en) | Production of semiconductor integrated circuit device | |
| JPS5320873A (en) | Semiconductor integrated circuit device |