JPS5355992A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5355992A
JPS5355992A JP13086776A JP13086776A JPS5355992A JP S5355992 A JPS5355992 A JP S5355992A JP 13086776 A JP13086776 A JP 13086776A JP 13086776 A JP13086776 A JP 13086776A JP S5355992 A JPS5355992 A JP S5355992A
Authority
JP
Japan
Prior art keywords
layer structure
semiconductor device
connection
structrues
minimized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13086776A
Other languages
Japanese (ja)
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13086776A priority Critical patent/JPS5355992A/en
Publication of JPS5355992A publication Critical patent/JPS5355992A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: A multi-layer structure composed of different kinds of metal is formed at part of a semiconductor substrate, and a single-layer structure is formed at other regions respectively. These two structrues are then extended up to the external terminal wiring region. As a result, the number of the connection is reduced between the multi-layer wirings, and at the same time the deterioration can be minimized at the connection part.
COPYRIGHT: (C)1978,JPO&Japio
JP13086776A 1976-10-29 1976-10-29 Semiconductor device Pending JPS5355992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13086776A JPS5355992A (en) 1976-10-29 1976-10-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13086776A JPS5355992A (en) 1976-10-29 1976-10-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5355992A true JPS5355992A (en) 1978-05-20

Family

ID=15044544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13086776A Pending JPS5355992A (en) 1976-10-29 1976-10-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5355992A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106043A (en) * 1980-12-22 1982-07-01 Seiko Epson Corp Semiconductor integrated circuit device
JPS5892201A (en) * 1981-11-27 1983-06-01 松下電器産業株式会社 thin film platinum temperature sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106043A (en) * 1980-12-22 1982-07-01 Seiko Epson Corp Semiconductor integrated circuit device
JPS5892201A (en) * 1981-11-27 1983-06-01 松下電器産業株式会社 thin film platinum temperature sensor

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