JPS5366384A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5366384A JPS5366384A JP14269376A JP14269376A JPS5366384A JP S5366384 A JPS5366384 A JP S5366384A JP 14269376 A JP14269376 A JP 14269376A JP 14269376 A JP14269376 A JP 14269376A JP S5366384 A JPS5366384 A JP S5366384A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- layer
- base layer
- thyristor
- cathode base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To increase the back bias voltage between the gate and the cathode and to reduce the turn off time, by adding and providing the layer of the same conduction type as the cathode base layer and having lower impurity concentration than it between the cathode emitter layer and the cathode base layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14269376A JPS5912025B2 (en) | 1976-11-26 | 1976-11-26 | thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14269376A JPS5912025B2 (en) | 1976-11-26 | 1976-11-26 | thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5366384A true JPS5366384A (en) | 1978-06-13 |
| JPS5912025B2 JPS5912025B2 (en) | 1984-03-19 |
Family
ID=15321325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14269376A Expired JPS5912025B2 (en) | 1976-11-26 | 1976-11-26 | thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5912025B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5698864A (en) * | 1979-10-10 | 1981-08-08 | Licentia Gmbh | Semiconductor constituent element |
| US4717940A (en) * | 1986-03-11 | 1988-01-05 | Kabushiki Kaisha Toshiba | MIS controlled gate turn-off thyristor |
| JPH036861A (en) * | 1989-06-05 | 1991-01-14 | Fuji Electric Co Ltd | Epitaxial gate turn-off thyristor |
| JPH08323047A (en) * | 1995-05-31 | 1996-12-10 | Iwaya Co Ltd | Action toy |
-
1976
- 1976-11-26 JP JP14269376A patent/JPS5912025B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5698864A (en) * | 1979-10-10 | 1981-08-08 | Licentia Gmbh | Semiconductor constituent element |
| US4717940A (en) * | 1986-03-11 | 1988-01-05 | Kabushiki Kaisha Toshiba | MIS controlled gate turn-off thyristor |
| JPH036861A (en) * | 1989-06-05 | 1991-01-14 | Fuji Electric Co Ltd | Epitaxial gate turn-off thyristor |
| JPH08323047A (en) * | 1995-05-31 | 1996-12-10 | Iwaya Co Ltd | Action toy |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5912025B2 (en) | 1984-03-19 |
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