JPS5367373A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5367373A
JPS5367373A JP14230476A JP14230476A JPS5367373A JP S5367373 A JPS5367373 A JP S5367373A JP 14230476 A JP14230476 A JP 14230476A JP 14230476 A JP14230476 A JP 14230476A JP S5367373 A JPS5367373 A JP S5367373A
Authority
JP
Japan
Prior art keywords
drain
semiconductor device
layer
mosfet
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14230476A
Other languages
Japanese (ja)
Inventor
Hiroo Masuda
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14230476A priority Critical patent/JPS5367373A/en
Publication of JPS5367373A publication Critical patent/JPS5367373A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To increase the drain dielectric strength and drain current of a MOSFET by providing the diffused layer, which has thinner impurity density and deeper diffusion depth than the drain layer, to the region overlapping the gate electrode.
COPYRIGHT: (C)1978,JPO&Japio
JP14230476A 1976-11-29 1976-11-29 Semiconductor device Pending JPS5367373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14230476A JPS5367373A (en) 1976-11-29 1976-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14230476A JPS5367373A (en) 1976-11-29 1976-11-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5367373A true JPS5367373A (en) 1978-06-15

Family

ID=15312245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14230476A Pending JPS5367373A (en) 1976-11-29 1976-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5367373A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887875A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Twin-gate type mis semiconductor device
WO2003021685A1 (en) * 2001-08-30 2003-03-13 Sony Corporation Semiconductor device and production method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887875A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Twin-gate type mis semiconductor device
WO2003021685A1 (en) * 2001-08-30 2003-03-13 Sony Corporation Semiconductor device and production method thereof
US6869847B2 (en) 2001-08-30 2005-03-22 Sony Corporation Semiconductor device manufacturing method thereof
US7122861B2 (en) 2001-08-30 2006-10-17 Sony Corporation Semiconductor device and manufacturing method thereof
CN1312777C (en) * 2001-08-30 2007-04-25 索尼株式会社 Semiconductor device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JPS5284981A (en) Production of insulated gate type semiconductor device
JPS5681972A (en) Mos type field effect transistor
JPS542679A (en) Nonvoltile semiconductor memory device
JPS53980A (en) Field-effect transistor of high dielectric strength
JPS5382179A (en) Field effect transistor
JPS57211778A (en) Mos semiconductor device
JPS52115663A (en) Semiconductor device
JPS5418684A (en) Manufacture of semiconductor device
JPS5367371A (en) Semiconductor device
JPS53141585A (en) Manufacture of insulating gate field effect type semiconductor device
JPS5366179A (en) Semiconductor device
JPS5368987A (en) Semiconductor device
JPS5286086A (en) Field effect transistor
JPS52127078A (en) Semiconductor device
JPS5376771A (en) Insulated gate type field effect transistor
JPS5364480A (en) Field effect semiconductor device
JPS52136583A (en) Mos type semiconductor device
JPS5372577A (en) High dielectric strength field effect transistor
JPS53110383A (en) Manufacture of semiconductor device
JPS52144980A (en) Sos semiconductor device
JPS5387679A (en) Semiconductor integrated circuit device
JPS538080A (en) Insulated gate type field effect transistor
JPS52147983A (en) Insulation gate type semiconductor device
JPS547881A (en) Mos field effect transistor
JPS5426668A (en) Field effect transistor of junction gate type