JPS5364480A - Field effect semiconductor device - Google Patents
Field effect semiconductor deviceInfo
- Publication number
- JPS5364480A JPS5364480A JP13956376A JP13956376A JPS5364480A JP S5364480 A JPS5364480 A JP S5364480A JP 13956376 A JP13956376 A JP 13956376A JP 13956376 A JP13956376 A JP 13956376A JP S5364480 A JPS5364480 A JP S5364480A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field effect
- effect semiconductor
- reproducibility
- progression
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To reduce channel length and stabilize reproducibility by blocking the progression of lateral diffusion along the substrate surface at the gate diffusion with electric insulation layers.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13956376A JPS5364480A (en) | 1976-11-22 | 1976-11-22 | Field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13956376A JPS5364480A (en) | 1976-11-22 | 1976-11-22 | Field effect semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5364480A true JPS5364480A (en) | 1978-06-08 |
Family
ID=15248168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13956376A Pending JPS5364480A (en) | 1976-11-22 | 1976-11-22 | Field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5364480A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5658259A (en) * | 1979-10-18 | 1981-05-21 | Toshiba Corp | Semiconductor device and production thereof |
| JPS56126977A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Junction type field effect transistor |
| JPH0234938A (en) * | 1988-07-25 | 1990-02-05 | Matsushita Electron Corp | Semiconductor device |
-
1976
- 1976-11-22 JP JP13956376A patent/JPS5364480A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5658259A (en) * | 1979-10-18 | 1981-05-21 | Toshiba Corp | Semiconductor device and production thereof |
| JPS56126977A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Junction type field effect transistor |
| JPH0234938A (en) * | 1988-07-25 | 1990-02-05 | Matsushita Electron Corp | Semiconductor device |
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