JPS5368583A - Mos type field effect transistor - Google Patents

Mos type field effect transistor

Info

Publication number
JPS5368583A
JPS5368583A JP14445076A JP14445076A JPS5368583A JP S5368583 A JPS5368583 A JP S5368583A JP 14445076 A JP14445076 A JP 14445076A JP 14445076 A JP14445076 A JP 14445076A JP S5368583 A JPS5368583 A JP S5368583A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
mos type
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14445076A
Other languages
Japanese (ja)
Inventor
Matsuo Ichinose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP14445076A priority Critical patent/JPS5368583A/en
Publication of JPS5368583A publication Critical patent/JPS5368583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a MOSFET of an extremely small size by determining the sizes of source and drain with the sizes of the polycrystalline Si wirings inserted into the respective opening parts and overlapping these polycrystalline wirings with gate Al wirings.
JP14445076A 1976-11-30 1976-11-30 Mos type field effect transistor Pending JPS5368583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14445076A JPS5368583A (en) 1976-11-30 1976-11-30 Mos type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14445076A JPS5368583A (en) 1976-11-30 1976-11-30 Mos type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5368583A true JPS5368583A (en) 1978-06-19

Family

ID=15362508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14445076A Pending JPS5368583A (en) 1976-11-30 1976-11-30 Mos type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5368583A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915375A (en) * 1972-05-18 1974-02-09
JPS4940886A (en) * 1972-08-25 1974-04-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915375A (en) * 1972-05-18 1974-02-09
JPS4940886A (en) * 1972-08-25 1974-04-17

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