JPS5268383A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5268383A
JPS5268383A JP50145459A JP14545975A JPS5268383A JP S5268383 A JPS5268383 A JP S5268383A JP 50145459 A JP50145459 A JP 50145459A JP 14545975 A JP14545975 A JP 14545975A JP S5268383 A JPS5268383 A JP S5268383A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
fet
equips
facilitated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50145459A
Other languages
Japanese (ja)
Other versions
JPS5916412B2 (en
Inventor
Hidetaro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50145459A priority Critical patent/JPS5916412B2/en
Publication of JPS5268383A publication Critical patent/JPS5268383A/en
Publication of JPS5916412B2 publication Critical patent/JPS5916412B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: The channel height of J-FET can be determined only by the difference of the diffusion depth between source-drain region and gate drain. Then, the manufacture of semiconductor device which equips longitudinal bipolar transistor and J-FET can be facilitated.
COPYRIGHT: (C)1977,JPO&Japio
JP50145459A 1975-12-05 1975-12-05 hand tai souchi no seizou houhou Expired JPS5916412B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50145459A JPS5916412B2 (en) 1975-12-05 1975-12-05 hand tai souchi no seizou houhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50145459A JPS5916412B2 (en) 1975-12-05 1975-12-05 hand tai souchi no seizou houhou

Publications (2)

Publication Number Publication Date
JPS5268383A true JPS5268383A (en) 1977-06-07
JPS5916412B2 JPS5916412B2 (en) 1984-04-16

Family

ID=15385708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50145459A Expired JPS5916412B2 (en) 1975-12-05 1975-12-05 hand tai souchi no seizou houhou

Country Status (1)

Country Link
JP (1) JPS5916412B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54113269A (en) * 1978-02-24 1979-09-04 Hitachi Ltd Production of junction-type electronic field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261032U (en) * 1988-10-28 1990-05-07

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54113269A (en) * 1978-02-24 1979-09-04 Hitachi Ltd Production of junction-type electronic field effect transistor

Also Published As

Publication number Publication date
JPS5916412B2 (en) 1984-04-16

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