JPS5376677A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5376677A
JPS5376677A JP15242676A JP15242676A JPS5376677A JP S5376677 A JPS5376677 A JP S5376677A JP 15242676 A JP15242676 A JP 15242676A JP 15242676 A JP15242676 A JP 15242676A JP S5376677 A JPS5376677 A JP S5376677A
Authority
JP
Japan
Prior art keywords
semiconductor device
diodes
expand
substrate
input voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15242676A
Other languages
Japanese (ja)
Other versions
JPS6042630B2 (en
Inventor
Minoru Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51152426A priority Critical patent/JPS6042630B2/en
Publication of JPS5376677A publication Critical patent/JPS5376677A/en
Publication of JPS6042630B2 publication Critical patent/JPS6042630B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To expand the allowable range of gate input voltage and prevent parasitic thyristor effect by connecting the diodes by the polycrystalline silicon thin-films formed on the insulation film on the surface of a substrate in a reverse direction.
JP51152426A 1976-12-17 1976-12-17 semiconductor equipment Expired JPS6042630B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51152426A JPS6042630B2 (en) 1976-12-17 1976-12-17 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51152426A JPS6042630B2 (en) 1976-12-17 1976-12-17 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5376677A true JPS5376677A (en) 1978-07-07
JPS6042630B2 JPS6042630B2 (en) 1985-09-24

Family

ID=15540247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51152426A Expired JPS6042630B2 (en) 1976-12-17 1976-12-17 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6042630B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591172A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS5591173A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS55166951A (en) * 1979-06-14 1980-12-26 Mitsubishi Electric Corp Surge preventive circuit for bipolar integrated circuit
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS61185962A (en) * 1985-02-13 1986-08-19 Nec Corp Complementary mos integrated circuit
JPS6230361A (en) * 1985-07-31 1987-02-09 Nec Corp Cmos input protecting circuit
JPS63211760A (en) * 1987-02-27 1988-09-02 Toshiba Corp Semiconductor device and manufacture thereof
JP2012209362A (en) * 2011-03-29 2012-10-25 Seiko Instruments Inc Esd protection circuit for semiconductor integrated circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591172A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS5591173A (en) * 1978-12-28 1980-07-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS55166951A (en) * 1979-06-14 1980-12-26 Mitsubishi Electric Corp Surge preventive circuit for bipolar integrated circuit
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS61185962A (en) * 1985-02-13 1986-08-19 Nec Corp Complementary mos integrated circuit
JPS6230361A (en) * 1985-07-31 1987-02-09 Nec Corp Cmos input protecting circuit
JPS63211760A (en) * 1987-02-27 1988-09-02 Toshiba Corp Semiconductor device and manufacture thereof
JP2012209362A (en) * 2011-03-29 2012-10-25 Seiko Instruments Inc Esd protection circuit for semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6042630B2 (en) 1985-09-24

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