JPS57201070A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57201070A
JPS57201070A JP56086533A JP8653381A JPS57201070A JP S57201070 A JPS57201070 A JP S57201070A JP 56086533 A JP56086533 A JP 56086533A JP 8653381 A JP8653381 A JP 8653381A JP S57201070 A JPS57201070 A JP S57201070A
Authority
JP
Japan
Prior art keywords
groove
substrate
electric power
polycrystalline silicon
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56086533A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56086533A priority Critical patent/JPS57201070A/en
Publication of JPS57201070A publication Critical patent/JPS57201070A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the size of a sdmiconductor device and to increase the electric power of the device by burying a polycrystalline semiconductor region in a single crystal semiconductor substrate. CONSTITUTION:Numeral 11 designates an N type silicon substrate, 12a a P type impurity diffused layer contained in the buried polycrystalline silicon 12, 13 an insulating film, and 14 an electrode. The layer 12 is formed by covering a polycrystalline silicon by a CVD method in a fine groove formed on the substrate 11, and it is necessary to form a polycrystalline silicon film on the side face of the groove of the substrate silicon. In a bipolar semiconductor device thus formed, in case of large electric power, the depth of the groove is increased, even if the width of the groove is fine, and the surface of the diffused layer 12a may be increased. Then, large electric power can be readily provided with small area.
JP56086533A 1981-06-05 1981-06-05 Semiconductor device Pending JPS57201070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56086533A JPS57201070A (en) 1981-06-05 1981-06-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56086533A JPS57201070A (en) 1981-06-05 1981-06-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57201070A true JPS57201070A (en) 1982-12-09

Family

ID=13889630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56086533A Pending JPS57201070A (en) 1981-06-05 1981-06-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57201070A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136270A (en) * 1983-12-24 1985-07-19 Toshiba Corp Manufacture of semiconductor device
WO1985003597A1 (en) * 1984-02-03 1985-08-15 Advanced Micro Devices, Inc. A bipolar transistor with active elements formed in slots
US4675715A (en) * 1982-12-09 1987-06-23 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor integrated circuit vertical geometry impedance element
US4924284A (en) * 1985-10-31 1990-05-08 International Business Machines Corporation Method of trench filling
JPH02283030A (en) * 1989-04-25 1990-11-20 Fuji Electric Co Ltd Semiconductor device provided with bipolar transistor
EP1047135A3 (en) * 1999-04-22 2002-04-17 Intersil Corporation Fast turn-off power semiconductor devices
JP2014143277A (en) * 2013-01-23 2014-08-07 Toyota Motor Corp Semiconductor device
CN108922925A (en) * 2018-07-09 2018-11-30 深圳市诚朗科技有限公司 A kind of power device protection chip and preparation method thereof
WO2019155768A1 (en) * 2018-02-09 2019-08-15 三菱電機株式会社 Power semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131277A (en) * 1975-05-09 1976-11-15 Fujitsu Ltd Semi-conductor unit manufacturing process
JPS51134075A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit
JPS51134074A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit
JPS571256A (en) * 1980-05-05 1982-01-06 Ibm Integrated circuit
JPS5762559A (en) * 1980-10-01 1982-04-15 Nec Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131277A (en) * 1975-05-09 1976-11-15 Fujitsu Ltd Semi-conductor unit manufacturing process
JPS51134075A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit
JPS51134074A (en) * 1975-05-15 1976-11-20 Fujitsu Ltd Method to manufacture the semiconductor unit
JPS571256A (en) * 1980-05-05 1982-01-06 Ibm Integrated circuit
JPS5762559A (en) * 1980-10-01 1982-04-15 Nec Corp Semiconductor device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675715A (en) * 1982-12-09 1987-06-23 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor integrated circuit vertical geometry impedance element
JPS60136270A (en) * 1983-12-24 1985-07-19 Toshiba Corp Manufacture of semiconductor device
US4803176A (en) * 1984-02-03 1989-02-07 Advanced Micro Devices, Inc. Integrated circuit structure with active device in merged slot and method of making same
US4733287A (en) * 1984-02-03 1988-03-22 Advanced Micro Devices, Inc. Integrated circuit structure with active elements of bipolar transistor formed in slots
US4749661A (en) * 1984-02-03 1988-06-07 Advanced Micro Devices, Inc. Vertical slot bottom bipolar transistor structure
US4795721A (en) * 1984-02-03 1989-01-03 Advanced Micro Devices, Inc. Walled slot devices and method of making same
WO1985003597A1 (en) * 1984-02-03 1985-08-15 Advanced Micro Devices, Inc. A bipolar transistor with active elements formed in slots
US4924284A (en) * 1985-10-31 1990-05-08 International Business Machines Corporation Method of trench filling
JPH02283030A (en) * 1989-04-25 1990-11-20 Fuji Electric Co Ltd Semiconductor device provided with bipolar transistor
EP1047135A3 (en) * 1999-04-22 2002-04-17 Intersil Corporation Fast turn-off power semiconductor devices
JP2014143277A (en) * 2013-01-23 2014-08-07 Toyota Motor Corp Semiconductor device
WO2019155768A1 (en) * 2018-02-09 2019-08-15 三菱電機株式会社 Power semiconductor device
JPWO2019155768A1 (en) * 2018-02-09 2020-09-10 三菱電機株式会社 Semiconductor devices for electric power
CN108922925A (en) * 2018-07-09 2018-11-30 深圳市诚朗科技有限公司 A kind of power device protection chip and preparation method thereof

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