JPS5376686A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5376686A
JPS5376686A JP15239576A JP15239576A JPS5376686A JP S5376686 A JPS5376686 A JP S5376686A JP 15239576 A JP15239576 A JP 15239576A JP 15239576 A JP15239576 A JP 15239576A JP S5376686 A JPS5376686 A JP S5376686A
Authority
JP
Japan
Prior art keywords
semiconductor device
capactors
fraction
conventional ones
same capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15239576A
Other languages
Japanese (ja)
Inventor
Teruo Iino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15239576A priority Critical patent/JPS5376686A/en
Publication of JPS5376686A publication Critical patent/JPS5376686A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a semiconductor device having capactors which have the same capacity even if electrode areas is a fraction of that of conventional ones, i.e., miniaturized capacitors.
COPYRIGHT: (C)1978,JPO&Japio
JP15239576A 1976-12-17 1976-12-17 Semiconductor device Pending JPS5376686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15239576A JPS5376686A (en) 1976-12-17 1976-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15239576A JPS5376686A (en) 1976-12-17 1976-12-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5376686A true JPS5376686A (en) 1978-07-07

Family

ID=15539569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15239576A Pending JPS5376686A (en) 1976-12-17 1976-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5376686A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660045A (en) * 1979-10-23 1981-05-23 Nec Corp Semiconductor device
JPS5775452A (en) * 1980-10-28 1982-05-12 Toshiba Corp Mos capacitor in semiconductor integrated circuit and manufacture thereof
JPS583259A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Manufacture of vertical type capacitor
JPS5891669A (en) * 1981-11-26 1983-05-31 Seiko Epson Corp semiconductor equipment
US4641279A (en) * 1983-03-07 1987-02-03 Hitachi, Ltd. Semiconductor memory device having a dummy cell and a memory cell which is twice the size of the dummy cell
US4656054A (en) * 1984-08-16 1987-04-07 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device involving a capacitor
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
JPS6323351A (en) * 1987-05-22 1988-01-30 Toshiba Corp Manufacture of semiconductor device
JPS6323352A (en) * 1987-05-22 1988-01-30 Toshiba Corp Manufacture of semiconductor device
US4751557A (en) * 1982-03-10 1988-06-14 Hitachi, Ltd. Dram with FET stacked over capacitor
JPH02191370A (en) * 1989-12-15 1990-07-27 Seiko Epson Corp semiconductor equipment
US5428236A (en) * 1983-12-15 1995-06-27 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capicitor
US6614094B2 (en) * 1999-12-21 2003-09-02 Stmicroelectronics S.R.L. High integration density vertical capacitor structure and fabrication process
DE102004063560A1 (en) * 2004-12-30 2006-07-20 Infineon Technologies Ag Capacitive structure for semiconductor technology in e.g. consumer electronics, industries and automobile electronics has trench which adjoins trough zone, which forms second electrode of capacitive structure, formed in semiconductor body

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660045A (en) * 1979-10-23 1981-05-23 Nec Corp Semiconductor device
JPS5775452A (en) * 1980-10-28 1982-05-12 Toshiba Corp Mos capacitor in semiconductor integrated circuit and manufacture thereof
JPS583259A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Manufacture of vertical type capacitor
JPS5891669A (en) * 1981-11-26 1983-05-31 Seiko Epson Corp semiconductor equipment
US4751557A (en) * 1982-03-10 1988-06-14 Hitachi, Ltd. Dram with FET stacked over capacitor
US4641279A (en) * 1983-03-07 1987-02-03 Hitachi, Ltd. Semiconductor memory device having a dummy cell and a memory cell which is twice the size of the dummy cell
US5428236A (en) * 1983-12-15 1995-06-27 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capicitor
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
US4656054A (en) * 1984-08-16 1987-04-07 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device involving a capacitor
JPS6323351A (en) * 1987-05-22 1988-01-30 Toshiba Corp Manufacture of semiconductor device
JPS6323352A (en) * 1987-05-22 1988-01-30 Toshiba Corp Manufacture of semiconductor device
JPH02191370A (en) * 1989-12-15 1990-07-27 Seiko Epson Corp semiconductor equipment
US6614094B2 (en) * 1999-12-21 2003-09-02 Stmicroelectronics S.R.L. High integration density vertical capacitor structure and fabrication process
DE102004063560A1 (en) * 2004-12-30 2006-07-20 Infineon Technologies Ag Capacitive structure for semiconductor technology in e.g. consumer electronics, industries and automobile electronics has trench which adjoins trough zone, which forms second electrode of capacitive structure, formed in semiconductor body
DE102004063560B4 (en) * 2004-12-30 2009-01-29 Infineon Technologies Ag Capacitive structure and method of making a capacitive structure

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