JPS5376770A - Production of insulated gate field effect transistor - Google Patents

Production of insulated gate field effect transistor

Info

Publication number
JPS5376770A
JPS5376770A JP15194276A JP15194276A JPS5376770A JP S5376770 A JPS5376770 A JP S5376770A JP 15194276 A JP15194276 A JP 15194276A JP 15194276 A JP15194276 A JP 15194276A JP S5376770 A JPS5376770 A JP S5376770A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15194276A
Other languages
Japanese (ja)
Other versions
JPS5946109B2 (en
Inventor
Toshiaki Ikoma
Hirokuni Tokuda
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51151942A priority Critical patent/JPS5946109B2/en
Priority to US05/825,720 priority patent/US4157610A/en
Publication of JPS5376770A publication Critical patent/JPS5376770A/en
Publication of JPS5946109B2 publication Critical patent/JPS5946109B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To simplify processes and obtain fine structure by forming a thin layer of a high impurity concentration on a semiconductor substrate as source and drain regions, and forming the insulator of a gate region and a gate metal electrode through self-alignment by using said thin layer.
COPYRIGHT: (C)1978,JPO&Japio
JP51151942A 1976-12-20 1976-12-20 Method for manufacturing insulated gate field effect transistor Expired JPS5946109B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP51151942A JPS5946109B2 (en) 1976-12-20 1976-12-20 Method for manufacturing insulated gate field effect transistor
US05/825,720 US4157610A (en) 1976-12-20 1977-08-18 Method of manufacturing a field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51151942A JPS5946109B2 (en) 1976-12-20 1976-12-20 Method for manufacturing insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS5376770A true JPS5376770A (en) 1978-07-07
JPS5946109B2 JPS5946109B2 (en) 1984-11-10

Family

ID=15529569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51151942A Expired JPS5946109B2 (en) 1976-12-20 1976-12-20 Method for manufacturing insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5946109B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423385A (en) * 1977-07-22 1979-02-21 Matsushita Electric Ind Co Ltd Gallium-arsenide semiconductor device
JPS5629371A (en) * 1979-08-20 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of insulated gate type field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4864889A (en) * 1971-12-08 1973-09-07
JPS5019399A (en) * 1973-06-21 1975-02-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4864889A (en) * 1971-12-08 1973-09-07
JPS5019399A (en) * 1973-06-21 1975-02-28

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423385A (en) * 1977-07-22 1979-02-21 Matsushita Electric Ind Co Ltd Gallium-arsenide semiconductor device
JPS5629371A (en) * 1979-08-20 1981-03-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of insulated gate type field effect transistor

Also Published As

Publication number Publication date
JPS5946109B2 (en) 1984-11-10

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