JPS5265686A - Production of mos semiconductor device - Google Patents
Production of mos semiconductor deviceInfo
- Publication number
- JPS5265686A JPS5265686A JP50143191A JP14319175A JPS5265686A JP S5265686 A JPS5265686 A JP S5265686A JP 50143191 A JP50143191 A JP 50143191A JP 14319175 A JP14319175 A JP 14319175A JP S5265686 A JPS5265686 A JP S5265686A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production
- mos semiconductor
- regions
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To improve the dielectric strength of the sourcedrain junction of a MOS semiconductor device by providing a spacing between the source-drain regions and channel stoper regions and using the lowness of the impurity concentration of the semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50143191A JPS5265686A (en) | 1975-11-27 | 1975-11-27 | Production of mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50143191A JPS5265686A (en) | 1975-11-27 | 1975-11-27 | Production of mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5265686A true JPS5265686A (en) | 1977-05-31 |
Family
ID=15332977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50143191A Pending JPS5265686A (en) | 1975-11-27 | 1975-11-27 | Production of mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5265686A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52130572A (en) * | 1976-04-26 | 1977-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of mis type semiconductor circuit device |
| US4404579A (en) * | 1980-10-28 | 1983-09-13 | Inc. Motorola | Semiconductor device having reduced capacitance and method of fabrication thereof |
| US4591890A (en) * | 1982-12-20 | 1986-05-27 | Motorola Inc. | Radiation hard MOS devices and methods for the manufacture thereof |
| JPS61225857A (en) * | 1985-03-29 | 1986-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of complementary semiconductor device |
| JPS63165857U (en) * | 1987-04-17 | 1988-10-28 |
-
1975
- 1975-11-27 JP JP50143191A patent/JPS5265686A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| PHILIPS PES REPTS#N26=1971NL * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52130572A (en) * | 1976-04-26 | 1977-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of mis type semiconductor circuit device |
| US4404579A (en) * | 1980-10-28 | 1983-09-13 | Inc. Motorola | Semiconductor device having reduced capacitance and method of fabrication thereof |
| US4591890A (en) * | 1982-12-20 | 1986-05-27 | Motorola Inc. | Radiation hard MOS devices and methods for the manufacture thereof |
| JPS61225857A (en) * | 1985-03-29 | 1986-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of complementary semiconductor device |
| JPS63165857U (en) * | 1987-04-17 | 1988-10-28 |
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