JPS538087A - Ill type semiconductor device - Google Patents

Ill type semiconductor device

Info

Publication number
JPS538087A
JPS538087A JP8197976A JP8197976A JPS538087A JP S538087 A JPS538087 A JP S538087A JP 8197976 A JP8197976 A JP 8197976A JP 8197976 A JP8197976 A JP 8197976A JP S538087 A JPS538087 A JP S538087A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
ill type
ill
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8197976A
Other languages
Japanese (ja)
Inventor
Mitsuo Usami
Akio Hayasaka
Takashi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8197976A priority Critical patent/JPS538087A/en
Publication of JPS538087A publication Critical patent/JPS538087A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To achieve the increase in current amplification factor by the concentration gradient producing acceleration fields by forming p<+> buried layers over n<+> buried layers at the time of epitazial formation and using said layers as the bases of npn transistors.
JP8197976A 1976-07-12 1976-07-12 Ill type semiconductor device Pending JPS538087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8197976A JPS538087A (en) 1976-07-12 1976-07-12 Ill type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8197976A JPS538087A (en) 1976-07-12 1976-07-12 Ill type semiconductor device

Publications (1)

Publication Number Publication Date
JPS538087A true JPS538087A (en) 1978-01-25

Family

ID=13761592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8197976A Pending JPS538087A (en) 1976-07-12 1976-07-12 Ill type semiconductor device

Country Status (1)

Country Link
JP (1) JPS538087A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213768U (en) * 1985-07-10 1987-01-27
JPS62227861A (en) * 1986-03-29 1987-10-06 Hino Motors Ltd Power steering used in vehicle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213768U (en) * 1985-07-10 1987-01-27
JPS62227861A (en) * 1986-03-29 1987-10-06 Hino Motors Ltd Power steering used in vehicle

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