JPS5384485A - Mos-type semiconductor device - Google Patents

Mos-type semiconductor device

Info

Publication number
JPS5384485A
JPS5384485A JP16023576A JP16023576A JPS5384485A JP S5384485 A JPS5384485 A JP S5384485A JP 16023576 A JP16023576 A JP 16023576A JP 16023576 A JP16023576 A JP 16023576A JP S5384485 A JPS5384485 A JP S5384485A
Authority
JP
Japan
Prior art keywords
mos
semiconductor device
type semiconductor
secure
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16023576A
Other languages
Japanese (ja)
Inventor
Hitoshi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16023576A priority Critical patent/JPS5384485A/en
Publication of JPS5384485A publication Critical patent/JPS5384485A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the operation speed as well as the integrated density by forming the C-MOS through the 2-stepped diffusion self-matching method to secure a desired channel length.
JP16023576A 1976-12-29 1976-12-29 Mos-type semiconductor device Pending JPS5384485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16023576A JPS5384485A (en) 1976-12-29 1976-12-29 Mos-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16023576A JPS5384485A (en) 1976-12-29 1976-12-29 Mos-type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5384485A true JPS5384485A (en) 1978-07-25

Family

ID=15710615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16023576A Pending JPS5384485A (en) 1976-12-29 1976-12-29 Mos-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5384485A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626471A (en) * 1979-08-10 1981-03-14 Matsushita Electric Ind Co Ltd Mos type semiconductor device
US5021858A (en) * 1990-05-25 1991-06-04 Hall John H Compound modulated integrated transistor structure
US5296727A (en) * 1990-08-24 1994-03-22 Fujitsu Limited Double gate FET and process for manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626471A (en) * 1979-08-10 1981-03-14 Matsushita Electric Ind Co Ltd Mos type semiconductor device
US5021858A (en) * 1990-05-25 1991-06-04 Hall John H Compound modulated integrated transistor structure
US5296727A (en) * 1990-08-24 1994-03-22 Fujitsu Limited Double gate FET and process for manufacturing same

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