Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP5506576ApriorityCriticalpatent/JPS52137982A/en
Publication of JPS52137982ApublicationCriticalpatent/JPS52137982A/en
PURPOSE: To suppress the formation of a P type inversion layer by Al solder by introducing a doner impurity several times to the securing side surface of an N type semiconductor layer through diffusion, etc.
COPYRIGHT: (C)1977,JPO&Japio
JP5506576A1976-05-141976-05-14Production of semiconductor device
PendingJPS52137982A
(en)