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Fujitsu Ltd
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Fujitsu Ltd
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Priority to JP15938876ApriorityCriticalpatent/JPS5384677A/en
Publication of JPS5384677ApublicationCriticalpatent/JPS5384677A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To obtain a good quality crystal layer by contacting a source wafer to crystal wafer surface immediate before starting of epitaxial growth thereby performing epitaxial growth.