JPS5386583A - Mos type semiconductor device and its production - Google Patents

Mos type semiconductor device and its production

Info

Publication number
JPS5386583A
JPS5386583A JP166677A JP166677A JPS5386583A JP S5386583 A JPS5386583 A JP S5386583A JP 166677 A JP166677 A JP 166677A JP 166677 A JP166677 A JP 166677A JP S5386583 A JPS5386583 A JP S5386583A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
mos type
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP166677A
Other languages
Japanese (ja)
Other versions
JPS6110991B2 (en
Inventor
Takeya Ezaki
Hirohei Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP166677A priority Critical patent/JPS5386583A/en
Publication of JPS5386583A publication Critical patent/JPS5386583A/en
Publication of JPS6110991B2 publication Critical patent/JPS6110991B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE: To produce MOSFETs of short channels by forming the concentration distribution in which the concentration is highest at the contact parts with drain or source electrodes and lowers as it goes toward gate insulation film forming without diffusing deeply.
COPYRIGHT: (C)1978,JPO&Japio
JP166677A 1977-01-10 1977-01-10 Mos type semiconductor device and its production Granted JPS5386583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP166677A JPS5386583A (en) 1977-01-10 1977-01-10 Mos type semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP166677A JPS5386583A (en) 1977-01-10 1977-01-10 Mos type semiconductor device and its production

Publications (2)

Publication Number Publication Date
JPS5386583A true JPS5386583A (en) 1978-07-31
JPS6110991B2 JPS6110991B2 (en) 1986-04-01

Family

ID=11507834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP166677A Granted JPS5386583A (en) 1977-01-10 1977-01-10 Mos type semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5386583A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351433U (en) * 1986-09-22 1988-04-07
JP2002543623A (en) * 1999-05-03 2002-12-17 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Self-aligned source and drain extensions fabricated by damascene contact and gate processes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351433U (en) * 1986-09-22 1988-04-07
JP2002543623A (en) * 1999-05-03 2002-12-17 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Self-aligned source and drain extensions fabricated by damascene contact and gate processes
JP4988091B2 (en) * 1999-05-03 2012-08-01 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Self-aligned source and drain extensions made by damascene contact and gate processes

Also Published As

Publication number Publication date
JPS6110991B2 (en) 1986-04-01

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