JPS5389367A - Substrate crystal for semiconductor epitaxial growth - Google Patents

Substrate crystal for semiconductor epitaxial growth

Info

Publication number
JPS5389367A
JPS5389367A JP411777A JP411777A JPS5389367A JP S5389367 A JPS5389367 A JP S5389367A JP 411777 A JP411777 A JP 411777A JP 411777 A JP411777 A JP 411777A JP S5389367 A JPS5389367 A JP S5389367A
Authority
JP
Japan
Prior art keywords
epitaxial growth
substrate crystal
semiconductor epitaxial
directions
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP411777A
Other languages
Japanese (ja)
Inventor
Toshiya Toyoshima
Junkichi Nakagawa
Seiji Mizuniwa
Toshio Sagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP411777A priority Critical patent/JPS5389367A/en
Publication of JPS5389367A publication Critical patent/JPS5389367A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To progress epitaxial growth preferentially in two specific right-angle directions, enhance two-dimensional uniformity and average the relaxing directions of the stress being generated by beforehand tilting the face bearing of substrate crystal surfaces in both of two <110> directions perpendicularly intersecting from [100] face.
COPYRIGHT: (C)1978,JPO&Japio
JP411777A 1977-01-18 1977-01-18 Substrate crystal for semiconductor epitaxial growth Pending JPS5389367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP411777A JPS5389367A (en) 1977-01-18 1977-01-18 Substrate crystal for semiconductor epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP411777A JPS5389367A (en) 1977-01-18 1977-01-18 Substrate crystal for semiconductor epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5389367A true JPS5389367A (en) 1978-08-05

Family

ID=11575831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP411777A Pending JPS5389367A (en) 1977-01-18 1977-01-18 Substrate crystal for semiconductor epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5389367A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6071599A (en) * 1983-09-22 1985-04-23 Mitsubishi Monsanto Chem Co Gallium phosphide-arsenide mixed crystal epitaxial wafer
JPS63226918A (en) * 1987-03-16 1988-09-21 Shin Etsu Handotai Co Ltd Gallium phosphide arsenide mixed crystal epitaxial wafer
JPH0294518A (en) * 1988-09-30 1990-04-05 Nippon Sanso Kk Doping method
JPH06279183A (en) * 1993-03-26 1994-10-04 Tokyo Inst Of Technol Forming method of ceramic thin film
JPH09106955A (en) * 1995-10-12 1997-04-22 Showa Denko Kk Epitaxial wafer and semiconductor light emitting device
WO2002005335A1 (en) * 2000-07-10 2002-01-17 Shin-Etsu Handotai Co.,Ltd. Single crystal wafer and solar battery cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.CRYSTAL GROUTH 27=1974 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6071599A (en) * 1983-09-22 1985-04-23 Mitsubishi Monsanto Chem Co Gallium phosphide-arsenide mixed crystal epitaxial wafer
JPS63226918A (en) * 1987-03-16 1988-09-21 Shin Etsu Handotai Co Ltd Gallium phosphide arsenide mixed crystal epitaxial wafer
JPH0294518A (en) * 1988-09-30 1990-04-05 Nippon Sanso Kk Doping method
JPH06279183A (en) * 1993-03-26 1994-10-04 Tokyo Inst Of Technol Forming method of ceramic thin film
JPH09106955A (en) * 1995-10-12 1997-04-22 Showa Denko Kk Epitaxial wafer and semiconductor light emitting device
WO2002005335A1 (en) * 2000-07-10 2002-01-17 Shin-Etsu Handotai Co.,Ltd. Single crystal wafer and solar battery cell
AU2001269469B2 (en) * 2000-07-10 2006-11-02 Shin-Etsu Handotai Co., Ltd. Single crystal wafer and solar battery cell
US7459720B2 (en) 2000-07-10 2008-12-02 Shin-Etsu Handotai Co., Ltd. Single crystal wafer and solar battery cell

Similar Documents

Publication Publication Date Title
JPS5389367A (en) Substrate crystal for semiconductor epitaxial growth
JPS51134071A (en) Method to eliminate crystal defects of silicon
JPS52125630A (en) Antiperkinson drugs containing l-threo-3,4-dihydroxyphenylserine
JPS53126866A (en) Production of semiconductor wafers
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS51140199A (en) Crystal working process
JPS5211860A (en) Liquid phase epitaxial device
JPS53142877A (en) Manufacture for compound semiconductor device
JPS52129275A (en) Impurity diffusion method
JPS51126047A (en) Growth device for semi-conductor crystals
JPS5326663A (en) Manu facture of semiconductor device
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5277584A (en) Growing crystal
JPS52139380A (en) Thin plate supporting device
JPS53123070A (en) Impurity diffusing method
JPS51118960A (en) Wafer form semiconductor doping material
JPS5424575A (en) Handling method of wafer
JPS5334465A (en) Manufacture for semiconductor epitaxial grown layer
JPS52109866A (en) Liquid epitaxial growing method
JPS5317278A (en) Ion implantation apparatus for semiconductor single crystal wafers
JPS5394870A (en) Liquid-phase epitaxial crystal growth method
JPS53142172A (en) Manufacture of semiconductor device
JPS52129291A (en) Semiconductor laser device
JPS53104158A (en) Manufacture for semiconductor device
JPS5381487A (en) Method and apparatus for liquid phase epitaxial growth