JPS5384457A - Liquid-phase epitaxial growth method - Google Patents

Liquid-phase epitaxial growth method

Info

Publication number
JPS5384457A
JPS5384457A JP15947976A JP15947976A JPS5384457A JP S5384457 A JPS5384457 A JP S5384457A JP 15947976 A JP15947976 A JP 15947976A JP 15947976 A JP15947976 A JP 15947976A JP S5384457 A JPS5384457 A JP S5384457A
Authority
JP
Japan
Prior art keywords
liquid
epitaxial growth
growth method
phase epitaxial
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15947976A
Other languages
Japanese (ja)
Inventor
Akio Yamaguchi
Kenzo Akita
Saburo Nakai
Takeshi Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15947976A priority Critical patent/JPS5384457A/en
Publication of JPS5384457A publication Critical patent/JPS5384457A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To produce a large-area epitaxial wafer regardless of the size of the solution tank and exceeding the tank size, although a limited amount of the solution is used.
COPYRIGHT: (C)1978,JPO&Japio
JP15947976A 1976-12-29 1976-12-29 Liquid-phase epitaxial growth method Pending JPS5384457A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15947976A JPS5384457A (en) 1976-12-29 1976-12-29 Liquid-phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15947976A JPS5384457A (en) 1976-12-29 1976-12-29 Liquid-phase epitaxial growth method

Publications (1)

Publication Number Publication Date
JPS5384457A true JPS5384457A (en) 1978-07-25

Family

ID=15694662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15947976A Pending JPS5384457A (en) 1976-12-29 1976-12-29 Liquid-phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5384457A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60261130A (en) * 1984-05-23 1985-12-24 バイエル・アクチエンゲゼルシヤフト Method of producing foil of semiconductor and device therefor
JPS62128522A (en) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd Liquid growth method
US4918029A (en) * 1987-02-21 1990-04-17 Samsung Electronics Co., Ltd. Method for liquid-phase thin film epitaxy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60261130A (en) * 1984-05-23 1985-12-24 バイエル・アクチエンゲゼルシヤフト Method of producing foil of semiconductor and device therefor
JPS62128522A (en) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd Liquid growth method
US4918029A (en) * 1987-02-21 1990-04-17 Samsung Electronics Co., Ltd. Method for liquid-phase thin film epitaxy

Similar Documents

Publication Publication Date Title
JPS5372A (en) Selective doping crystal growing method
JPS5286059A (en) Process for production and apparatus used for process of semiconductor device
JPS5288276A (en) Liquid-phase epitaxial growth
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS5423467A (en) Singlecrystal growing method for binary semiconductor
JPS52135264A (en) Liquid phase epitaxial growth method
JPS52117062A (en) Liquid phase epitaxial growth process
JPS5211860A (en) Liquid phase epitaxial device
JPS5368070A (en) Etching method
JPS5427767A (en) Single crystal growing method of multielement semiconductors
JPS5348669A (en) Growth method of semiconductor crystal
JPS5244193A (en) Epitaxial growth method
JPS5376657A (en) Liquid phase epitaxial growth method
JPS5326663A (en) Manu facture of semiconductor device
JPS52120763A (en) Silicon epitaxial growth method
JPS52155189A (en) Multiple layer crystal growth
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5286775A (en) Bebeling method for semiconductor substrate
JPS5345171A (en) Molecular beam epitaxial growth method
JPS51126037A (en) Semiconductor crystal growth method
JPS5358782A (en) Semiconductor device
JPS52154347A (en) Low temperature single crystal thin film growth method
JPS5366163A (en) Selective growth method of semiconductor buried layer
JPS51142499A (en) Crystal growing method
JPS51145268A (en) Epitaxial semiconductor device