JPS5389376A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5389376A
JPS5389376A JP413577A JP413577A JPS5389376A JP S5389376 A JPS5389376 A JP S5389376A JP 413577 A JP413577 A JP 413577A JP 413577 A JP413577 A JP 413577A JP S5389376 A JPS5389376 A JP S5389376A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
patterns
regions
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP413577A
Other languages
Japanese (ja)
Other versions
JPS6135708B2 (en
Inventor
Eisuke Ichinohe
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP413577A priority Critical patent/JPS5389376A/en
Publication of JPS5389376A publication Critical patent/JPS5389376A/en
Publication of JPS6135708B2 publication Critical patent/JPS6135708B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve the integration density of an IC by defining transistor forming regions with the patterns of a Si3N4 film and forming source, drain, gate regions on these patterns through a self-alignment method.
COPYRIGHT: (C)1978,JPO&Japio
JP413577A 1977-01-17 1977-01-17 Production of semiconductor device Granted JPS5389376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP413577A JPS5389376A (en) 1977-01-17 1977-01-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP413577A JPS5389376A (en) 1977-01-17 1977-01-17 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5389376A true JPS5389376A (en) 1978-08-05
JPS6135708B2 JPS6135708B2 (en) 1986-08-14

Family

ID=11576328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP413577A Granted JPS5389376A (en) 1977-01-17 1977-01-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5389376A (en)

Also Published As

Publication number Publication date
JPS6135708B2 (en) 1986-08-14

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