JPS5372470A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5372470A
JPS5372470A JP14713776A JP14713776A JPS5372470A JP S5372470 A JPS5372470 A JP S5372470A JP 14713776 A JP14713776 A JP 14713776A JP 14713776 A JP14713776 A JP 14713776A JP S5372470 A JPS5372470 A JP S5372470A
Authority
JP
Japan
Prior art keywords
semiconductor device
type
layer
superimposingly
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14713776A
Other languages
Japanese (ja)
Other versions
JPS6036110B2 (en
Inventor
Yutaka Hayashi
Toshihiro Sekikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP51147137A priority Critical patent/JPS6036110B2/en
Publication of JPS5372470A publication Critical patent/JPS5372470A/en
Publication of JPS6036110B2 publication Critical patent/JPS6036110B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To manufacture the device integrated with high density, by making the P type channel layer and N type source layer superimposingly for a part to the N type drain layer provided in a given depth to the substrate and by forming the gate electrode through the V-groove provision.
COPYRIGHT: (C)1978,JPO&Japio
JP51147137A 1976-12-09 1976-12-09 semiconductor equipment Expired JPS6036110B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51147137A JPS6036110B2 (en) 1976-12-09 1976-12-09 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51147137A JPS6036110B2 (en) 1976-12-09 1976-12-09 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5372470A true JPS5372470A (en) 1978-06-27
JPS6036110B2 JPS6036110B2 (en) 1985-08-19

Family

ID=15423397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51147137A Expired JPS6036110B2 (en) 1976-12-09 1976-12-09 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6036110B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115858A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Mis type semiconductor device
JPS60229364A (en) * 1984-04-09 1985-11-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン semiconductor equipment
JPH01194364A (en) * 1988-01-28 1989-08-04 Nec Corp Longitudinal type high dielectric strength semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914391A (en) * 1972-05-22 1974-02-07
JPS4928790A (en) * 1972-07-18 1974-03-14
JPS5132075A (en) * 1974-09-11 1976-03-18 Tetsutaro Mori Senkohodenkan no tentokairo

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914391A (en) * 1972-05-22 1974-02-07
JPS4928790A (en) * 1972-07-18 1974-03-14
JPS5132075A (en) * 1974-09-11 1976-03-18 Tetsutaro Mori Senkohodenkan no tentokairo

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115858A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Mis type semiconductor device
JPS60229364A (en) * 1984-04-09 1985-11-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン semiconductor equipment
JPH01194364A (en) * 1988-01-28 1989-08-04 Nec Corp Longitudinal type high dielectric strength semiconductor device

Also Published As

Publication number Publication date
JPS6036110B2 (en) 1985-08-19

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