JPS539480A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS539480A
JPS539480A JP8291876A JP8291876A JPS539480A JP S539480 A JPS539480 A JP S539480A JP 8291876 A JP8291876 A JP 8291876A JP 8291876 A JP8291876 A JP 8291876A JP S539480 A JPS539480 A JP S539480A
Authority
JP
Japan
Prior art keywords
semiconductor device
gate
impurity concentration
concentration distribution
gain variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8291876A
Other languages
Japanese (ja)
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8291876A priority Critical patent/JPS539480A/en
Publication of JPS539480A publication Critical patent/JPS539480A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make gain variable by partially changing the conductivity type or impurity concentration distribution of a Si gate over channel in a Si gate type FET.
COPYRIGHT: (C)1978,JPO&Japio
JP8291876A 1976-07-14 1976-07-14 Semiconductor device Pending JPS539480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8291876A JPS539480A (en) 1976-07-14 1976-07-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8291876A JPS539480A (en) 1976-07-14 1976-07-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS539480A true JPS539480A (en) 1978-01-27

Family

ID=13787615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8291876A Pending JPS539480A (en) 1976-07-14 1976-07-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS539480A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60242675A (en) * 1984-10-24 1985-12-02 Hitachi Ltd Manufacture of insulated gate type field-effect semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60242675A (en) * 1984-10-24 1985-12-02 Hitachi Ltd Manufacture of insulated gate type field-effect semiconductor device

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