JPS6219772U - - Google Patents
Info
- Publication number
- JPS6219772U JPS6219772U JP11000585U JP11000585U JPS6219772U JP S6219772 U JPS6219772 U JP S6219772U JP 11000585 U JP11000585 U JP 11000585U JP 11000585 U JP11000585 U JP 11000585U JP S6219772 U JPS6219772 U JP S6219772U
- Authority
- JP
- Japan
- Prior art keywords
- laser
- monitoring
- laser chip
- area
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
Description
第１図は本考案半導体レーザの実施の一例を示
す断面図、第２図はレーザチツプとフオトダイオ
ード形成領域との間の間隔と、フオトダイオード
の出力との関係を示す相関図、第３図は従来の半
導体レーザの一例を示す断面図である。
符号の説明、１……半導体基板、４……フオト
ダイオード形成領域、５……レーザチツプボンデ
イング領域、６……レーザチツプ、９……モニタ
ー用レーザビーム出射端面、ｄ……モニター用レ
ーザビーム出射端面とフオトダイオード形成領域
との間の間隔。
FIG. 1 is a cross-sectional view showing an example of the implementation of the semiconductor laser of the present invention, FIG. 2 is a correlation diagram showing the relationship between the distance between the laser chip and the photodiode formation region and the output of the photodiode, and FIG. 1 is a cross-sectional view showing an example of a conventional semiconductor laser. Explanation of symbols: 1...Semiconductor substrate, 4...Photodiode formation region, 5...Laser chip bonding area, 6...Laser chip, 9...Laser beam emission end face for monitoring, d...Laser beam emission end face for monitoring and the photodiode formation area.
Claims (1)
チツプボンデイング領域とを有した半導体基板の
上記レーザチツプボンデイング領域にレーザチツ
プをそのモニター用レーザビーム出射端面と上記
モニター用フオトダイオード形成領域との間に間
隔が１０ｕｍ以上５０ｕｍ以下になるようにボン
デイングしてなる、 ことを特徴とする半導体レーザ。[Claims for Utility Model Registration] A laser chip is attached to the laser chip bonding area of a semiconductor substrate having a monitoring photodiode forming area and a laser chip bonding area, and the monitoring laser beam emitting end surface thereof and the monitoring photodiode forming area. 1. A semiconductor laser characterized in that the semiconductor laser is formed by bonding such that the distance between the two is 10 um or more and 50 um or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11000585U JPS6219772U (en) | 1985-07-18 | 1985-07-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11000585U JPS6219772U (en) | 1985-07-18 | 1985-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6219772U true JPS6219772U (en) | 1987-02-05 |
Family
ID=30988624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11000585U Pending JPS6219772U (en) | 1985-07-18 | 1985-07-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6219772U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539491A (en) * | 1976-07-14 | 1978-01-27 | Toshiba Corp | Photo semiconductor device |
| JPS5515035A (en) * | 1978-07-20 | 1980-02-01 | Oki Electric Ind Co Ltd | Photo detector |
| JPS5760037U (en) * | 1980-09-19 | 1982-04-09 |
-
1985
- 1985-07-18 JP JP11000585U patent/JPS6219772U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539491A (en) * | 1976-07-14 | 1978-01-27 | Toshiba Corp | Photo semiconductor device |
| JPS5515035A (en) * | 1978-07-20 | 1980-02-01 | Oki Electric Ind Co Ltd | Photo detector |
| JPS5760037U (en) * | 1980-09-19 | 1982-04-09 |