JPS53979A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS53979A
JPS53979A JP7435176A JP7435176A JPS53979A JP S53979 A JPS53979 A JP S53979A JP 7435176 A JP7435176 A JP 7435176A JP 7435176 A JP7435176 A JP 7435176A JP S53979 A JPS53979 A JP S53979A
Authority
JP
Japan
Prior art keywords
preparation
semiconductor device
drain
difference
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7435176A
Other languages
Japanese (ja)
Inventor
Osamu Minato
Seiji Kubo
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7435176A priority Critical patent/JPS53979A/en
Publication of JPS53979A publication Critical patent/JPS53979A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enhance the dielectic strength of a drain by increasing the dielectric strength of a gate making use of a difference in the thickness of SiO2 based on a difference in the impurity concentration and keeping constant the impurity concentration on the surfaces of the source and drain.
COPYRIGHT: (C)1978,JPO&Japio
JP7435176A 1976-06-25 1976-06-25 Preparation of semiconductor device Pending JPS53979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7435176A JPS53979A (en) 1976-06-25 1976-06-25 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7435176A JPS53979A (en) 1976-06-25 1976-06-25 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53979A true JPS53979A (en) 1978-01-07

Family

ID=13544607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7435176A Pending JPS53979A (en) 1976-06-25 1976-06-25 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53979A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605519A (en) * 1983-12-09 1986-08-12 The Dow Chemical Company O- and S-(2-mercaptoalkyl)- mono- or dihydrocarbyl carbamothioates and S-(2-mercaptoalkyl)mono- or dihydrocarbyl carbamodithioates
JPH06104429A (en) * 1992-09-18 1994-04-15 Rohm Co Ltd Mos transistor
US6238978B1 (en) * 1999-11-05 2001-05-29 Advanced Micro Devices, Inc Use of etch to blunt gate corners

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605519A (en) * 1983-12-09 1986-08-12 The Dow Chemical Company O- and S-(2-mercaptoalkyl)- mono- or dihydrocarbyl carbamothioates and S-(2-mercaptoalkyl)mono- or dihydrocarbyl carbamodithioates
JPH06104429A (en) * 1992-09-18 1994-04-15 Rohm Co Ltd Mos transistor
US6238978B1 (en) * 1999-11-05 2001-05-29 Advanced Micro Devices, Inc Use of etch to blunt gate corners

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