JPS54100277A - Semiconductor element for hybrid integrated circuit - Google Patents

Semiconductor element for hybrid integrated circuit

Info

Publication number
JPS54100277A
JPS54100277A JP700478A JP700478A JPS54100277A JP S54100277 A JPS54100277 A JP S54100277A JP 700478 A JP700478 A JP 700478A JP 700478 A JP700478 A JP 700478A JP S54100277 A JPS54100277 A JP S54100277A
Authority
JP
Japan
Prior art keywords
film
capacitor
resistance
electrode
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP700478A
Other languages
Japanese (ja)
Inventor
Yasuichi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP700478A priority Critical patent/JPS54100277A/en
Publication of JPS54100277A publication Critical patent/JPS54100277A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To reduce the virtual number of the component parts as well as the mutual connection and thus to enhance the reliability and the working efficiency by forming the parallel circuit of the resistance and the capacitor into a semiconductor element in a monolithic way and then using the circuit as a circuit parts in the hybrid integrated circuit.
CONSTITUTION: Insulator film 2 such as an oxide film is coated on N+- or P+-type semiconductor substrate 1, and electrode 3 and 3' composed of the metal film are formed on film 2. Then resistance film 4 composed of the resistance material such as Ni-Cr and others is provided on film 2 between electrode 3 and 3', thus constituting a capacitor with substrate 1, film 2 and metal film 3. To make film 4 parallel to the capacitor, electrode 3 and 3' are used in common to the overlap electrode for the resistance film and the capacitor. In this way, the parallel circuit of the resistance and the capacitor can be formed easily and then incorporated into the hybrid integrated circuit, thus reducing the connection areas for the soldering or the like.
COPYRIGHT: (C)1979,JPO&Japio
JP700478A 1978-01-24 1978-01-24 Semiconductor element for hybrid integrated circuit Pending JPS54100277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP700478A JPS54100277A (en) 1978-01-24 1978-01-24 Semiconductor element for hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP700478A JPS54100277A (en) 1978-01-24 1978-01-24 Semiconductor element for hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS54100277A true JPS54100277A (en) 1979-08-07

Family

ID=11653920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP700478A Pending JPS54100277A (en) 1978-01-24 1978-01-24 Semiconductor element for hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS54100277A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065458A3 (en) * 2002-01-31 2003-11-27 Philips Intellectual Property Electronic device
CN100442515C (en) * 2002-01-31 2008-12-10 Nxp股份有限公司 Integrated circuit with a plurality of transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065458A3 (en) * 2002-01-31 2003-11-27 Philips Intellectual Property Electronic device
CN100442515C (en) * 2002-01-31 2008-12-10 Nxp股份有限公司 Integrated circuit with a plurality of transistors

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