JPS54100671A - Transistor - Google Patents

Transistor

Info

Publication number
JPS54100671A
JPS54100671A JP748478A JP748478A JPS54100671A JP S54100671 A JPS54100671 A JP S54100671A JP 748478 A JP748478 A JP 748478A JP 748478 A JP748478 A JP 748478A JP S54100671 A JPS54100671 A JP S54100671A
Authority
JP
Japan
Prior art keywords
layer
type
emitter
center part
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP748478A
Other languages
Japanese (ja)
Inventor
Shunji Miura
Shinichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP748478A priority Critical patent/JPS54100671A/en
Publication of JPS54100671A publication Critical patent/JPS54100671A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve secondary-breakdown resistance at a reverse bias time by lessening current convergence by removing the center part of an emitter layer and covering it with an insulating film. CONSTITUTION:On n-type collector layer 11, p-type base layer 12 and n-type emitter layer 13 reside and base layer 12 is exposed at the center part of layer 13. On layer 11, n<+>-type layer 14 is stacked. The base layer exposed at the center part of the emitter layer is covered with insulating film 16 and emitter electrode 18 is stacked and then connected to the emitter layer. Windows are made in oxidized film 15 and base electrodes 17 are formed. In this constitution, current convergence lessens remarkably.
JP748478A 1978-01-26 1978-01-26 Transistor Pending JPS54100671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP748478A JPS54100671A (en) 1978-01-26 1978-01-26 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP748478A JPS54100671A (en) 1978-01-26 1978-01-26 Transistor

Publications (1)

Publication Number Publication Date
JPS54100671A true JPS54100671A (en) 1979-08-08

Family

ID=11667031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP748478A Pending JPS54100671A (en) 1978-01-26 1978-01-26 Transistor

Country Status (1)

Country Link
JP (1) JPS54100671A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150271A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Semiconductor device
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC DESIGN=1966 *
IBM TECHNICAL DISCLOSURE BULLETIN=1974 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150271A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Semiconductor device
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor

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