JPS5580352A - Transistor with high breakdown voltage - Google Patents

Transistor with high breakdown voltage

Info

Publication number
JPS5580352A
JPS5580352A JP15436678A JP15436678A JPS5580352A JP S5580352 A JPS5580352 A JP S5580352A JP 15436678 A JP15436678 A JP 15436678A JP 15436678 A JP15436678 A JP 15436678A JP S5580352 A JPS5580352 A JP S5580352A
Authority
JP
Japan
Prior art keywords
voltage
transistor
layer
collector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15436678A
Other languages
Japanese (ja)
Inventor
Shunji Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15436678A priority Critical patent/JPS5580352A/en
Publication of JPS5580352A publication Critical patent/JPS5580352A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a transistor having high breakdown voltage protective function without empolying a protective diode on external of the transistor. CONSTITUTION:A collector electrode C and an independent p<+>-layer 4 on the counter side thereto are formed on an n<->-collector layer 3 between p-base layers 1, 2, thereby inducing a short circuit to the electrode C ro reach-through phenomenon or avalanche phenomenon. Then, the breakdown voltage is selected therefor lower than an emitter-collector voltage. An n<+>-emitter layer 5 and the p-base layer 2 are connected through an insulating film 6 with a conductor 7. From applying a voltage between electrodes C and E with the electrode C positive, an inverted layer 8 is produced under the insulating film 6 in accordance as the voltage rises, the p-layers 1 and 2 are conducting through the p<+>-layer, and thus the collector and the emitter are conducting. By setting a voltage necessary for inversion lower than the sustained voltage of a transistor, the transistor can be protected from a secondary breakdown.
JP15436678A 1978-12-12 1978-12-12 Transistor with high breakdown voltage Pending JPS5580352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15436678A JPS5580352A (en) 1978-12-12 1978-12-12 Transistor with high breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15436678A JPS5580352A (en) 1978-12-12 1978-12-12 Transistor with high breakdown voltage

Publications (1)

Publication Number Publication Date
JPS5580352A true JPS5580352A (en) 1980-06-17

Family

ID=15582578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15436678A Pending JPS5580352A (en) 1978-12-12 1978-12-12 Transistor with high breakdown voltage

Country Status (1)

Country Link
JP (1) JPS5580352A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111369A (en) * 1981-12-24 1983-07-02 Nippon Denso Co Ltd Semiconductor device
JPS58134467A (en) * 1982-02-05 1983-08-10 Nippon Denso Co Ltd Semiconductor device
JPS60160665A (en) * 1984-01-31 1985-08-22 Nec Kansai Ltd semiconductor equipment
JPH03220727A (en) * 1990-01-26 1991-09-27 Mitsubishi Electric Corp Semiconductor device
US5596217A (en) * 1981-12-24 1997-01-21 Nippondenso Co., Ltd. Semiconductor device including overvoltage protection diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111369A (en) * 1981-12-24 1983-07-02 Nippon Denso Co Ltd Semiconductor device
US5596217A (en) * 1981-12-24 1997-01-21 Nippondenso Co., Ltd. Semiconductor device including overvoltage protection diode
JPS58134467A (en) * 1982-02-05 1983-08-10 Nippon Denso Co Ltd Semiconductor device
JPS60160665A (en) * 1984-01-31 1985-08-22 Nec Kansai Ltd semiconductor equipment
JPH03220727A (en) * 1990-01-26 1991-09-27 Mitsubishi Electric Corp Semiconductor device

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