JPS54108577A - Glass coating method of semiconductor element - Google Patents

Glass coating method of semiconductor element

Info

Publication number
JPS54108577A
JPS54108577A JP1523378A JP1523378A JPS54108577A JP S54108577 A JPS54108577 A JP S54108577A JP 1523378 A JP1523378 A JP 1523378A JP 1523378 A JP1523378 A JP 1523378A JP S54108577 A JPS54108577 A JP S54108577A
Authority
JP
Japan
Prior art keywords
glass
glass powder
compound
dispersed
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1523378A
Other languages
Japanese (ja)
Inventor
Masaru Shinpo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1523378A priority Critical patent/JPS54108577A/en
Publication of JPS54108577A publication Critical patent/JPS54108577A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To electrodeposit any kind of glass easily by using a glass-dispersed solution obtained by adding a La compound to powdery glass.
CONSTITUTION: Zinc borate based glass powder is dispersed in isopropyl alcohol and lanthanum nitrate is dissolved at a rate of 1 x 10-5 to 2 x 10-3 mole per gram of glass. In this solution, glass powder is electrodeposited on the fixed surface of a Si element with a platinum electrode connected to the positive pole and heated to obtain a glass coating. In general, this glass powder uses any kind of one for semiconductor coating. Its medium may use a group of ketone in addition to ethanol. As a La compound, an organic compound may be used. In this method, La ions becomes lanthanum hydroxide and is deposited among glass powder particles to form a strong film. As a result, a current is cut off to prevent local concentration and glass powder moves into a deep bevel groove, so that it can be filled.
COPYRIGHT: (C)1979,JPO&Japio
JP1523378A 1978-02-13 1978-02-13 Glass coating method of semiconductor element Pending JPS54108577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1523378A JPS54108577A (en) 1978-02-13 1978-02-13 Glass coating method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1523378A JPS54108577A (en) 1978-02-13 1978-02-13 Glass coating method of semiconductor element

Publications (1)

Publication Number Publication Date
JPS54108577A true JPS54108577A (en) 1979-08-25

Family

ID=11883138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1523378A Pending JPS54108577A (en) 1978-02-13 1978-02-13 Glass coating method of semiconductor element

Country Status (1)

Country Link
JP (1) JPS54108577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112366229A (en) * 2020-11-30 2021-02-12 江苏吉莱微电子股份有限公司 Novel mesa structure chip structure and PN terminal surface glass passivation manufacturing process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112366229A (en) * 2020-11-30 2021-02-12 江苏吉莱微电子股份有限公司 Novel mesa structure chip structure and PN terminal surface glass passivation manufacturing process

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