JPS54112181A - Nonvolatile semiconductor memory unit - Google Patents

Nonvolatile semiconductor memory unit

Info

Publication number
JPS54112181A
JPS54112181A JP2010478A JP2010478A JPS54112181A JP S54112181 A JPS54112181 A JP S54112181A JP 2010478 A JP2010478 A JP 2010478A JP 2010478 A JP2010478 A JP 2010478A JP S54112181 A JPS54112181 A JP S54112181A
Authority
JP
Japan
Prior art keywords
region
gate layer
memory element
type
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010478A
Other languages
Japanese (ja)
Inventor
Mikio Kyomasu
Shinobu Fukunaga
Yoshiharu Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010478A priority Critical patent/JPS54112181A/en
Publication of JPS54112181A publication Critical patent/JPS54112181A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To make a memory element operate stably with no latch-up phenomenon even when combined with a peripheral device such as a C-MOSIC circuit by composing the memory element of a P-channel FET of lamination gate structure and by allowing it to operate under fixed conditions. CONSTITUTION:In N<->-type Si substrate 1, P<+>-type drain region 2a and P<+>-type source region 2b are formed by diffusion, and shallow N-type region 9 touching region 2a is also formed by diffusion, Next, 1st polycrystal Si gate layer 4 on region 9 and SiO2 film 3 including 2nd poly-crystal Si gate layer 8 expanding onto region 2b are both adhered over the entire surface and after an opening is made, Al electrodes 5 are fitted to regions 2a and 2b, and gate layer 8. In this way, since region 9 of higher impurity density than that of substrate 1 is provided, the threshold level of the memory element becomes high and even if a voltage of approximate 5V is applied to gate layer 8, no channel is generated. Further, the avalanch breakdown voltage of the PN junction between regions 9 and 2a decreases and the write voltage also decreases.
JP2010478A 1978-02-22 1978-02-22 Nonvolatile semiconductor memory unit Pending JPS54112181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010478A JPS54112181A (en) 1978-02-22 1978-02-22 Nonvolatile semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010478A JPS54112181A (en) 1978-02-22 1978-02-22 Nonvolatile semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS54112181A true JPS54112181A (en) 1979-09-01

Family

ID=12017795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010478A Pending JPS54112181A (en) 1978-02-22 1978-02-22 Nonvolatile semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS54112181A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812367A (en) * 1981-07-16 1983-01-24 Matsushita Electronics Corp semiconductor storage device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812367A (en) * 1981-07-16 1983-01-24 Matsushita Electronics Corp semiconductor storage device

Similar Documents

Publication Publication Date Title
JPS55113359A (en) Semiconductor integrated circuit device
JPS5623771A (en) Semiconductor memory
GB1425985A (en) Arrangements including semiconductor memory devices
US4084108A (en) Integrated circuit device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5816565A (en) Insulating gate type field effect transistor
JPS54112181A (en) Nonvolatile semiconductor memory unit
JPS561573A (en) Semiconductor nonvolatile memory
JPS5567160A (en) Semiconductor memory storage
JPS54148388A (en) Semiconductor integrated circuit device
JPS6427272A (en) Semiconductor device
JPS5572069A (en) Semiconductor device
JPS5591177A (en) Semiconductor integrated circuit
JPS56104473A (en) Semiconductor memory device and manufacture thereof
JPS5750463A (en) Complementary type mos semiconductor device
JPS5621375A (en) Semiconductor nonvolatile memory device
JPS5673468A (en) Mos type semiconductor device
JPS55113364A (en) Semiconductor integrated circuit device
JPS5635472A (en) Mos type nonvolatile memory device
JPS5599765A (en) Mos memory device
JPS6024593B2 (en) semiconductor equipment
JPS56108269A (en) Semiconductor non volatile memory device
JPS5591178A (en) Non-volatile semiconductor memory
JPS5591180A (en) Non-volatile semiconductor memory
JPS55127052A (en) Field effect semiconductor device