JPS6427272A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6427272A
JPS6427272A JP62182143A JP18214387A JPS6427272A JP S6427272 A JPS6427272 A JP S6427272A JP 62182143 A JP62182143 A JP 62182143A JP 18214387 A JP18214387 A JP 18214387A JP S6427272 A JPS6427272 A JP S6427272A
Authority
JP
Japan
Prior art keywords
layer
impurity concentration
overshoot
gate electrode
mis transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62182143A
Other languages
Japanese (ja)
Inventor
Makoto Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62182143A priority Critical patent/JPS6427272A/en
Publication of JPS6427272A publication Critical patent/JPS6427272A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To reduce an overshoot of a drain current in high-speed pulse driven operation by designing optimum impurity concentration and film thickness of an Si layer of an MIS transistor having an SOI (Silicon on Insulator) structure. CONSTITUTION:Impurity concentration and thickness of a semiconductor layer are set such that a potential barrier (a maximum value) between the semiconductor layer and a source layer beneath a channel region may become below 0.3eV in a state of being biased in an on state of pulse operation of a MIS transistor. For example, an Si layer 3 has a film thickness of 0.1mum and an impurity concentration of 1X10<16>/cm<3>. A gate electrode 5 of a polycrystal silicon film is formed on this SOI substrate through a gate insulating film 4 and n<+> type source and drain layers 6 and 7 are formed in a self-aligning manner on this gate electrode 5. As a result, an overshoot of a drain current in high-speed pulse driven operation can be small enough to be below Insec.
JP62182143A 1987-07-23 1987-07-23 Semiconductor device Pending JPS6427272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62182143A JPS6427272A (en) 1987-07-23 1987-07-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62182143A JPS6427272A (en) 1987-07-23 1987-07-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6427272A true JPS6427272A (en) 1989-01-30

Family

ID=16113105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62182143A Pending JPS6427272A (en) 1987-07-23 1987-07-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6427272A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040037A (en) * 1988-12-13 1991-08-13 Mitsubishi Denki Kabushiki Kaisha MOS type field effect transistor formed on a semiconductor layer on an insulator substrate
JPH04147629A (en) * 1990-10-09 1992-05-21 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure
JPH0645609A (en) * 1991-01-14 1994-02-18 Nippon Telegr & Teleph Corp <Ntt> Field-effect semiconductor device and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040037A (en) * 1988-12-13 1991-08-13 Mitsubishi Denki Kabushiki Kaisha MOS type field effect transistor formed on a semiconductor layer on an insulator substrate
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure
JPH04147629A (en) * 1990-10-09 1992-05-21 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH0645609A (en) * 1991-01-14 1994-02-18 Nippon Telegr & Teleph Corp <Ntt> Field-effect semiconductor device and method of manufacturing the same

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