JPS54128295A - Mis-type semiconductor integrated circuit device - Google Patents

Mis-type semiconductor integrated circuit device

Info

Publication number
JPS54128295A
JPS54128295A JP3550278A JP3550278A JPS54128295A JP S54128295 A JPS54128295 A JP S54128295A JP 3550278 A JP3550278 A JP 3550278A JP 3550278 A JP3550278 A JP 3550278A JP S54128295 A JPS54128295 A JP S54128295A
Authority
JP
Japan
Prior art keywords
resistance
substrate
misfet
oxide film
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3550278A
Other languages
Japanese (ja)
Other versions
JPS6235272B2 (en
Inventor
Kiyobumi Uchibori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3550278A priority Critical patent/JPS54128295A/en
Publication of JPS54128295A publication Critical patent/JPS54128295A/en
Publication of JPS6235272B2 publication Critical patent/JPS6235272B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To ensure output of the signals with the compensated level regardless of the fluctuation of the power voltage by using the resistance semiconductor element featuring the resistance value reduced with lowering of the substrate voltage to the load resistance.
CONSTITUTION: Si field oxide film 2 is coated on P-type Si substrate 1, and n-type source region 8 and drain region 9 are provided to substrate 1. And gate electrode 5 composed of n-type poly Si is provided via thin Si oxide film 3A, thus obtaining the MISFET. While the resistance composed of poly Si layer 6B is provided on substrate 1 via thin Si oxide film 3B. This resistance is affected by the electric field from the substrate since film 3B is thin, and thus the resistance value reduces with decrement of back bias voltage VBB applied to electrode 14. Accordingly, in case power voltage VDD applied to terminal 13 reduces and thus VBB decreases via the inverter circuit comprising the series circuit of the MISFET and the resistance on the substrat, the threshold voltage of the MISFET lowers. At the same time, the resistance value of layer 6B is reduced to compensate the logic threshold voltage of the circuit.
COPYRIGHT: (C)1979,JPO&Japio
JP3550278A 1978-03-29 1978-03-29 Mis-type semiconductor integrated circuit device Granted JPS54128295A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3550278A JPS54128295A (en) 1978-03-29 1978-03-29 Mis-type semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3550278A JPS54128295A (en) 1978-03-29 1978-03-29 Mis-type semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59176656A Division JPS60121761A (en) 1984-08-27 1984-08-27 Mis type semiconductor memory

Publications (2)

Publication Number Publication Date
JPS54128295A true JPS54128295A (en) 1979-10-04
JPS6235272B2 JPS6235272B2 (en) 1987-07-31

Family

ID=12443523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3550278A Granted JPS54128295A (en) 1978-03-29 1978-03-29 Mis-type semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54128295A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404581A (en) * 1980-12-15 1983-09-13 Rockwell International Corporation ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells
US4419808A (en) * 1980-12-15 1983-12-13 Rockwell International Corporation Method of producing redundant ROM cells
US4455567A (en) * 1981-11-27 1984-06-19 Hughes Aircraft Company Polycrystalline semiconductor resistor having a noise reducing field plate
DE3530897A1 (en) * 1984-08-31 1986-03-13 Hitachi, Ltd., Tokio/Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122484A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Field effect type polisilicon resistance element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122484A (en) * 1976-04-07 1977-10-14 Hitachi Ltd Field effect type polisilicon resistance element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404581A (en) * 1980-12-15 1983-09-13 Rockwell International Corporation ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells
US4419808A (en) * 1980-12-15 1983-12-13 Rockwell International Corporation Method of producing redundant ROM cells
US4455567A (en) * 1981-11-27 1984-06-19 Hughes Aircraft Company Polycrystalline semiconductor resistor having a noise reducing field plate
DE3530897A1 (en) * 1984-08-31 1986-03-13 Hitachi, Ltd., Tokio/Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT

Also Published As

Publication number Publication date
JPS6235272B2 (en) 1987-07-31

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