JPS5420679A - Bipolar mos semiconductor integrated circuit device and the same - Google Patents

Bipolar mos semiconductor integrated circuit device and the same

Info

Publication number
JPS5420679A
JPS5420679A JP8506577A JP8506577A JPS5420679A JP S5420679 A JPS5420679 A JP S5420679A JP 8506577 A JP8506577 A JP 8506577A JP 8506577 A JP8506577 A JP 8506577A JP S5420679 A JPS5420679 A JP S5420679A
Authority
JP
Japan
Prior art keywords
same
integrated circuit
semiconductor integrated
circuit device
mos semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8506577A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8506577A priority Critical patent/JPS5420679A/en
Publication of JPS5420679A publication Critical patent/JPS5420679A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the scale of integration and obtain low noise characteristics by forming bipolar and MOS elements on one semiconductor substrate by using multilayer epitaxial growth techniques in place of well regions through ion implantation.
JP8506577A 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same Pending JPS5420679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8506577A JPS5420679A (en) 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8506577A JPS5420679A (en) 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same

Publications (1)

Publication Number Publication Date
JPS5420679A true JPS5420679A (en) 1979-02-16

Family

ID=13848219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8506577A Pending JPS5420679A (en) 1977-07-18 1977-07-18 Bipolar mos semiconductor integrated circuit device and the same

Country Status (1)

Country Link
JP (1) JPS5420679A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158468A (en) * 1980-02-25 1981-12-07 Harris Corp Method of manufacturing itnegrated circuit
JPS59111355A (en) * 1982-12-17 1984-06-27 Nippon Precision Saakitsutsu Kk semiconductor equipment
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacturing method of semiconductor device
JPH0395665U (en) * 1990-11-15 1991-09-30

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158468A (en) * 1980-02-25 1981-12-07 Harris Corp Method of manufacturing itnegrated circuit
JPS59111355A (en) * 1982-12-17 1984-06-27 Nippon Precision Saakitsutsu Kk semiconductor equipment
JPS6017943A (en) * 1983-07-08 1985-01-29 Matsushita Electronics Corp Manufacturing method of semiconductor device
JPH0395665U (en) * 1990-11-15 1991-09-30

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