JPS545392A - Semiconductor integrated circuit and its manufacture - Google Patents

Semiconductor integrated circuit and its manufacture

Info

Publication number
JPS545392A
JPS545392A JP6982877A JP6982877A JPS545392A JP S545392 A JPS545392 A JP S545392A JP 6982877 A JP6982877 A JP 6982877A JP 6982877 A JP6982877 A JP 6982877A JP S545392 A JPS545392 A JP S545392A
Authority
JP
Japan
Prior art keywords
manufacture
integrated circuit
semiconductor integrated
epitaxial layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6982877A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Sadao Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6982877A priority Critical patent/JPS545392A/en
Publication of JPS545392A publication Critical patent/JPS545392A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form npn bipolar element and n-channel MOSFET within the same substrate by providing n epitaxial layer isolated by p-type layer on p-type substrate and then forming p epitaxial layer selectively.
JP6982877A 1977-06-15 1977-06-15 Semiconductor integrated circuit and its manufacture Pending JPS545392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6982877A JPS545392A (en) 1977-06-15 1977-06-15 Semiconductor integrated circuit and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6982877A JPS545392A (en) 1977-06-15 1977-06-15 Semiconductor integrated circuit and its manufacture

Publications (1)

Publication Number Publication Date
JPS545392A true JPS545392A (en) 1979-01-16

Family

ID=13414006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6982877A Pending JPS545392A (en) 1977-06-15 1977-06-15 Semiconductor integrated circuit and its manufacture

Country Status (1)

Country Link
JP (1) JPS545392A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111355A (en) * 1982-12-17 1984-06-27 Nippon Precision Saakitsutsu Kk semiconductor equipment
JPH02144129A (en) * 1988-11-26 1990-06-01 Akzo Nv Hollow fiber module
JPH0395665U (en) * 1990-11-15 1991-09-30

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111355A (en) * 1982-12-17 1984-06-27 Nippon Precision Saakitsutsu Kk semiconductor equipment
JPH02144129A (en) * 1988-11-26 1990-06-01 Akzo Nv Hollow fiber module
JPH0395665U (en) * 1990-11-15 1991-09-30

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