JPS545392A - Semiconductor integrated circuit and its manufacture - Google Patents
Semiconductor integrated circuit and its manufactureInfo
- Publication number
- JPS545392A JPS545392A JP6982877A JP6982877A JPS545392A JP S545392 A JPS545392 A JP S545392A JP 6982877 A JP6982877 A JP 6982877A JP 6982877 A JP6982877 A JP 6982877A JP S545392 A JPS545392 A JP S545392A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- integrated circuit
- semiconductor integrated
- epitaxial layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To form npn bipolar element and n-channel MOSFET within the same substrate by providing n epitaxial layer isolated by p-type layer on p-type substrate and then forming p epitaxial layer selectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6982877A JPS545392A (en) | 1977-06-15 | 1977-06-15 | Semiconductor integrated circuit and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6982877A JPS545392A (en) | 1977-06-15 | 1977-06-15 | Semiconductor integrated circuit and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS545392A true JPS545392A (en) | 1979-01-16 |
Family
ID=13414006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6982877A Pending JPS545392A (en) | 1977-06-15 | 1977-06-15 | Semiconductor integrated circuit and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS545392A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111355A (en) * | 1982-12-17 | 1984-06-27 | Nippon Precision Saakitsutsu Kk | semiconductor equipment |
| JPH02144129A (en) * | 1988-11-26 | 1990-06-01 | Akzo Nv | Hollow fiber module |
| JPH0395665U (en) * | 1990-11-15 | 1991-09-30 |
-
1977
- 1977-06-15 JP JP6982877A patent/JPS545392A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111355A (en) * | 1982-12-17 | 1984-06-27 | Nippon Precision Saakitsutsu Kk | semiconductor equipment |
| JPH02144129A (en) * | 1988-11-26 | 1990-06-01 | Akzo Nv | Hollow fiber module |
| JPH0395665U (en) * | 1990-11-15 | 1991-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5230388A (en) | Semiconductor integrated circuit device constructed with insulating ga te field effect transistor | |
| JPS5425175A (en) | Integrated circuit device | |
| JPS52156580A (en) | Semiconductor integrated circuit device and its production | |
| JPS545392A (en) | Semiconductor integrated circuit and its manufacture | |
| JPS5376679A (en) | Semiconductor device | |
| JPS52104076A (en) | Semiconductor unit | |
| JPS533075A (en) | Production of mos structure field effect semiconductor device | |
| JPS5353279A (en) | Semiconductor integrating circuit | |
| JPS5420679A (en) | Bipolar mos semiconductor integrated circuit device and the same | |
| JPS53100780A (en) | Complementary type mos transistor | |
| JPS5264284A (en) | Semiconductor device | |
| JPS5263080A (en) | Production of semiconductor integrated circuit device | |
| JPS5411687A (en) | Manufacture for semiconductor integrated circuit | |
| JPS5353988A (en) | Semiconductor integrated circuit | |
| JPS5265689A (en) | Semiconductor integrated circuit and its production | |
| JPS5339087A (en) | Integrated circuit | |
| JPS5236484A (en) | Semiconductor integrated circuit | |
| JPS5226185A (en) | Semi-conductor unit | |
| JPS5310281A (en) | Production of mos type semiconductor integrated circuit | |
| JPS53125774A (en) | Bipolar transistor and its manufacture | |
| JPS53134373A (en) | Semiconductor integrated circuit device | |
| JPS5438779A (en) | Semiconductor integrated circuit device | |
| JPS51117586A (en) | Semiconductor resistance equipment | |
| JPS52109376A (en) | Semiconductor integrated circuit | |
| JPS5211783A (en) | Field effect transistor for integrated circuits |