JPS542070A - Manufacture for semiconductor element - Google Patents
Manufacture for semiconductor elementInfo
- Publication number
- JPS542070A JPS542070A JP6628477A JP6628477A JPS542070A JP S542070 A JPS542070 A JP S542070A JP 6628477 A JP6628477 A JP 6628477A JP 6628477 A JP6628477 A JP 6628477A JP S542070 A JPS542070 A JP S542070A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- manufacture
- annealing
- sio
- insulation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To manufacture semiconductor element, by performing the annealing of insulation film such as SiO2 with plasma etching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6628477A JPS542070A (en) | 1977-06-07 | 1977-06-07 | Manufacture for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6628477A JPS542070A (en) | 1977-06-07 | 1977-06-07 | Manufacture for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS542070A true JPS542070A (en) | 1979-01-09 |
Family
ID=13311368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6628477A Pending JPS542070A (en) | 1977-06-07 | 1977-06-07 | Manufacture for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS542070A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690528A (en) * | 1979-12-22 | 1981-07-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Surface treatment of semiconductor device |
| JPS57103333A (en) * | 1980-12-18 | 1982-06-26 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6482618A (en) * | 1987-09-25 | 1989-03-28 | Nec Corp | Heat treatment |
| JPH02103935A (en) * | 1988-10-13 | 1990-04-17 | Toshiba Corp | Manufacture of semiconductor device |
| US4952523A (en) * | 1985-06-21 | 1990-08-28 | Texas Instruments Incorporated | Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface |
-
1977
- 1977-06-07 JP JP6628477A patent/JPS542070A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690528A (en) * | 1979-12-22 | 1981-07-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Surface treatment of semiconductor device |
| JPS57103333A (en) * | 1980-12-18 | 1982-06-26 | Toshiba Corp | Manufacture of semiconductor device |
| US4952523A (en) * | 1985-06-21 | 1990-08-28 | Texas Instruments Incorporated | Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface |
| JPS6482618A (en) * | 1987-09-25 | 1989-03-28 | Nec Corp | Heat treatment |
| JPH02103935A (en) * | 1988-10-13 | 1990-04-17 | Toshiba Corp | Manufacture of semiconductor device |
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